2015
DOI: 10.1016/j.tsf.2014.12.021
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Resistive switching characteristics and conduction mechanisms of nonvolatile memory devices based on Ga and Sn co-doped ZnO films

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Cited by 8 publications
(6 citation statements)
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“…Various dopant elements, such as Al [ 137 , 175 , 176 ], B [ 177 ], Co [ 138 , 139 , 169 , 178 ], Cr [ 110 , 158 ], Cu [ 87 , 140 , 179 ], Fe [ 180 , 181 ], Ga [ 112 , 182 , 183 ], La [ 144 ], Li [ 184 , 185 ], Mg [ 55 , 111 , 145 , 186 190 ], Mn [ 91 , 146 148 , 191 – 195 ], N [ 56 , 149 ], Ni [ 196 ], S [ 197 ], Sn [ 90 , 198 ], Ta [ 199 ], Ti [ 150 , 151 ], V [ 85 ], and Zr [ 86 ], that have been reported may exhibit decent switching performance. ZnO-based RRAM with multi-element doping, such as Al-Sn [ 136 , 200 ], Ga-Sn [ 201 ], and In-Ga [ 141 143 , 202 – 208 ], is also proposed. The effect of doping on the resistive switching performance is summarized in Table 2 .…”
Section: Reviewmentioning
confidence: 99%
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“…Various dopant elements, such as Al [ 137 , 175 , 176 ], B [ 177 ], Co [ 138 , 139 , 169 , 178 ], Cr [ 110 , 158 ], Cu [ 87 , 140 , 179 ], Fe [ 180 , 181 ], Ga [ 112 , 182 , 183 ], La [ 144 ], Li [ 184 , 185 ], Mg [ 55 , 111 , 145 , 186 190 ], Mn [ 91 , 146 148 , 191 – 195 ], N [ 56 , 149 ], Ni [ 196 ], S [ 197 ], Sn [ 90 , 198 ], Ta [ 199 ], Ti [ 150 , 151 ], V [ 85 ], and Zr [ 86 ], that have been reported may exhibit decent switching performance. ZnO-based RRAM with multi-element doping, such as Al-Sn [ 136 , 200 ], Ga-Sn [ 201 ], and In-Ga [ 141 143 , 202 – 208 ], is also proposed. The effect of doping on the resistive switching performance is summarized in Table 2 .…”
Section: Reviewmentioning
confidence: 99%
“…Employing an amorphous resistive layer may also avoid the formation of excessive and branching of CF due to the lack of grain boundary structure. Several efforts have been reported to fabricate amorphous ZnO-based RRAM, such as by doping [ 90 , 141 143 , 177 , 198 , 201 203 , 205 208 ], hydrogen peroxide treatment [ 183 ], and deposition parameter optimization [ 132 ].…”
Section: Reviewmentioning
confidence: 99%
“…[35,30] Gallium-doped ZTO based on solution processing was also achieved by Oh et al by using gallium nitrate (Ga(NO 3 ) 3 ) as a precursor. [24] Moving one step forward, printed memristive devices using ZTO nano-cubes as the switching medium have also been reported by Siddiqui et al [27,28] Here an electro-hydrodynamic atomization (EHDA) process was used. This method consists of the deposition of thin films through the injection of ink by a syringe pump into a metallic nozzle, which in turn forms a Taylor cone allowing for the controlled deposition of the material.…”
Section: Solution Processing Techniquesmentioning
confidence: 95%
“…For example, not only has gallium been studied as a ZTO dopant [ 24 ] ( Figure a), but it has also been shown that using aluminium as a doping agent can improve the retention performance of devices (Figure 6b). Hsu et al.…”
Section: Materials and Deposition Methodsmentioning
confidence: 99%
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