Resistive switching characteristics and conduction mechanisms of nonvolatile memory devices based on Ga and Sn co-doped ZnO films

Oh, Do-Hyun; Yun, Dong Yeol; Lee, Nam Hyun; Kim, Tae Whan

doi:10.1016/j.tsf.2014.12.021

Cited by 8 publications

(6 citation statements)

References 23 publications

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“…Various dopant elements, such as Al [ 137 , 175 , 176 ], B [ 177 ], Co [ 138 , 139 , 169 , 178 ], Cr [ 110 , 158 ], Cu [ 87 , 140 , 179 ], Fe [ 180 , 181 ], Ga [ 112 , 182 , 183 ], La [ 144 ], Li [ 184 , 185 ], Mg [ 55 , 111 , 145 , 186 – 190 ], Mn [ 91 , 146 – 148 , 191 – 195 ], N [ 56 , 149 ], Ni [ 196 ], S [ 197 ], Sn [ 90 , 198 ], Ta [ 199 ], Ti [ 150 , 151 ], V [ 85 ], and Zr [ 86 ], that have been reported may exhibit decent switching performance. ZnO-based RRAM with multi-element doping, such as Al-Sn [ 136 , 200 ], Ga-Sn [ 201 ], and In-Ga [ 141 – 143 , 202 – 208 ], is also proposed. The effect of doping on the resistive switching performance is summarized in Table 2 .…”

Section: Reviewmentioning

confidence: 99%

“…Employing an amorphous resistive layer may also avoid the formation of excessive and branching of CF due to the lack of grain boundary structure. Several efforts have been reported to fabricate amorphous ZnO-based RRAM, such as by doping [ 90 , 141 – 143 , 177 , 198 , 201 – 203 , 205 – 208 ], hydrogen peroxide treatment [ 183 ], and deposition parameter optimization [ 132 ].…”

Section: Reviewmentioning

confidence: 99%

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Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

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Section: Reviewmentioning

confidence: 99%

Section: Reviewmentioning

confidence: 99%

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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“…[35,30] Gallium-doped ZTO based on solution processing was also achieved by Oh et al by using gallium nitrate (Ga(NO 3 ) 3 ) as a precursor. [24] Moving one step forward, printed memristive devices using ZTO nano-cubes as the switching medium have also been reported by Siddiqui et al [27,28] Here an electro-hydrodynamic atomization (EHDA) process was used. This method consists of the deposition of thin films through the injection of ink by a syringe pump into a metallic nozzle, which in turn forms a Taylor cone allowing for the controlled deposition of the material.…”

Section: Solution Processing Techniquesmentioning

confidence: 95%

“…For example, not only has gallium been studied as a ZTO dopant [ 24 ] ( Figure a), but it has also been shown that using aluminium as a doping agent can improve the retention performance of devices (Figure 6b). Hsu et al.…”

Section: Materials and Deposition Methodsmentioning

confidence: 99%

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Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices

Silva,

Deuermeier,

Zhang

et al. 2023

Adv Elect Materials

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As the Internet of things (IOT) industry continues to grow with an ever‐increasing number of connected devices, the need for processing large amounts of data in a fast and energy‐efficient way becomes an even more pressing issue. Alternative computation devices such as resistive random access memories (RRAM), or memristors, started taking centre stage as prime candidates to tackle this issue due to their in‐memory computation capabilities. Amorphous oxide semiconductors (AOSs), more specifically eco‐friendly zinc‐tin oxide (ZTO), show great promise as a memristive active material for flexible and sustainable applications due to its low required fabrication temperature, amorphous structure, low‐cost, and critical‐raw‐material‐free composition. In this perspective article, the research progress on ZTO‐based memristors is reviewed in terms of device structure and material compositions. The effects on the electrical performance of the devices are studied. Additionally, neuromorphic and optoelectronic capabilities are analyzed with the objective of finding the best approaches toward implementing these devices in novel computing paradigms.

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Switching characteristics of TaO x -based one diode-one resistor for crossbar memory application

Jin

Yoon

et al. 2016

Electron. Mater. Lett.

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Resistive switching characteristics and conduction mechanisms of nonvolatile memory devices based on Ga and Sn co-doped ZnO films

Cited by 8 publications

References 23 publications

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices

Switching characteristics of TaO x -based one diode-one resistor for crossbar memory application

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