High-resolution transmission electron microscopy images showed that ZnO nanoparticles were randomly distributed in a polystyrene (PS) layer. Current-voltage (I-V) curves at 300 K for Al/ZnO nanoparticles embedded in PS layer/indium tin oxide devices showed a current bistability with a large ON/OFF ratio of 103 for write-once-read-many-times (WORM) memory devices. The estimated retention time of the ON state for the WORM device was more than 10 years. The carrier transport mechanisms for the WORM memory device are described on the basis of the I-V results.
X-ray photoelectron spectra, X-ray diffraction patterns, scanning electron microscopy images, and high-resolution transmission electron microscopy images showed that the as-prepared samples were Cu2ZnSnS4 (CZTS) nanospheres with a kesterite phase. Ultraviolet-visible absorption spectra for the CZTS nanospheres with an average crystallite size of 3.26 nm showed that the absorption edge corresponding to the energy gap shifted to the higher energy side due to the quantum confinement within the CZTS nanoparticles. Current-density measurements showed that the power conversion efficiency (0.952%) of the organic photovoltaic cells with CZTS nanospheres was much higher than that (0.120%) of the cells without CZTS nanospheres.
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