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The effect of the concentration of poly(3-hexylthiophene) (P3HT) on the electrical characteristics of diode rectifiable devices fabricated utilizing the P3HT was investigated. Atomic force microscopy images showed that the root-mean-square surface roughness of the P3HT thin films decreased with decreasing P3HT concentration. The current-voltage (I-V) characteristics of the Au/P3HT layer/indium-tin-oxide-coated glass devices showed resistance switchability. The I-V characteristics of the devices showed that the ON current at the same voltage decreased with increasing concentration and that the operating voltage of the device with a larger P3HT concentration was larger than that of the device with a smaller P3HT concentration. The diode rectifiable mode of the devices transformed from the Ohmic into the space-charge-limited current modes with increasing applied voltage.

X-ray photoelectron spectroscopy spectra showed that the synthesized elements of the CdSe/CdS/ ZnS QDs were Cd, Se, Zn, and S. Organic bistable devices (OBDs) containing CdSe/CdS/ZnS quantum dots (QDs) and a poly(methylmethacrylate) (PMMA) layer were fabricated on indium-tin-oxide (ITO)-deposited glass substrates. Current-voltage (I-V) curves showed that the memory margin of the Al/(CdSe/CdS/ZnS QDs) embedded in PMMA layer/ITO device at 300 K was larger than that of the device without a ZnS shell layer. The retention time of the OBDs was above 1 x 10(4) s, indicative of the stability of the device. The memory mechanisms were described by using charge trapping and tunneling processes on the basis of the energy diagram and the I-V curves.