Resistive Switching Behavior in Amorphous Aluminum Oxide Film Grown by Chemical Vapor Deposition

Abstract

The repeatable bipolar resistive switching phenomenon is observed in amorphous Al2O3 prepared by metalorganic chemical vapor deposition on ITO glass, with ITO as the bottom electrode and Ag as the top electrode. The crystal structure, morphology, composition and optical properties of Al2O3 thin films are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and ultraviolet-visible-infrared spectroscopy, respectively. The electronic character of Ag/Al2O3/ITO structure is tested by an Agilent B1500A. The device shows a typical bipolar resistive switching behavior under the dc voltage sweep mode at room temperature. The variation ratio between HRS and LRS is larger than nearly three orders of magnitude, which indicates the good potential of this structure in future resistive random access memory (ReRAM) applications. Based on the conductive filament model, the high electric field is considered the main reason for the resistive switching according to our measurements.

Reset-First and Multibit-Level Resistive-Switching Behavior of Lanthanum Nickel Oxide (LaNiO3−x) Thin Films

“…Metal-oxide-based resistive random-access memories (RRAMs) [ 17 , 18 ] are promising nonvolatile memories [ 19 , 20 , 21 ]. Various binary oxides, such as Al 2 O 3 [ 22 , 23 ], HfO 2 [ 24 , 25 , 26 ], ZrO 2 [ 27 , 28 , 29 ], Ta 2 O 5 [ 30 , 31 ], and ZnO [ 32 , 33 ], have been studied for resistive-switching (RS)-memory devices owing to their relatively simple structure and ease of fabrication. Additionally, multicomponent perovskite oxides, such as Pr 0.3 Ca 0.7 MnO 3 [ 34 , 35 , 36 ], have been widely examined for their nonvolatile, forming-free memory switching; area scalability; low variability; and good reliability.…”

Reset First Resistive Switching in Ni1−xO Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering

“…In addition, the device could be fabricated in a simple metal-insulator-metal (MIM) [3] structure, enabling the high-density cell structure of a cross-bar array with 4F 2 [4,5]. It was reported that numerous transition metal oxides, including Al 2 O 3 [6,7], HfO 2 [8][9][10], NiO x [11][12][13][14], TiO x [15,16], TaO x [17,18], Nb 2 O 5 [19,20], and Pr 1−x Ca x MnO 3 [21][22][23] show resistive switching (RS) characteristics. Moreover, various deposition techniques, such as sputtering [24][25][26][27][28], atomic layer deposition (ALD) [29] and pulsed laser deposition (PLD) [30] were used for the formation of such oxides.…”

Bipolar resistive switching characteristics of amorphous SrTiO3thin films prepared by the sol-gel process

“…This development has attracted widespread attention in the industry and academia, and many new investigations of resistive memory have been initiated by researchers [13,14]. The RS effect of the insulator layer has been discovered in various kinds of amorphous metal oxides, such as ZnO, HfO 2 , TiO 2 , MgO, Al 2 O 3 , and Y 2 O 3 [15][16][17][18][19]; and in amorphous perovskite and layered perovskite oxides such as YCrO 3 , Pr 0.67 Sr 0.33 MnO 3 , Bi 3.15 Bd 0.85 Ti 3 O 12 , SrTiO 3 and Nb-doped SrTiO 3 [20][21][22][23][24][25][26], etc. Among these, the amorphous strontium titanate-based memory structure uses the following electrodes: Pt, Ti, and indium tin oxide (ITO) [23][24][25][26].…”