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The repeatable bipolar resistive switching phenomenon is observed in amorphous Al2O3 prepared by metalorganic chemical vapor deposition on ITO glass, with ITO as the bottom electrode and Ag as the top electrode. The crystal structure, morphology, composition and optical properties of Al2O3 thin films are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and ultraviolet-visible-infrared spectroscopy, respectively. The electronic character of Ag/Al2O3/ITO structure is tested by an Agilent B1500A. The device shows a typical bipolar resistive switching behavior under the dc voltage sweep mode at room temperature. The variation ratio between HRS and LRS is larger than nearly three orders of magnitude, which indicates the good potential of this structure in future resistive random access memory (ReRAM) applications. Based on the conductive filament model, the high electric field is considered the main reason for the resistive switching according to our measurements.

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In the present work the authors have fabricated copper oxide nanoparticles through a water bath method and investigated their composition and microstructure using XRD and TEM methods. Their electrical properties were investigated under different atmospheres and temperatures after painting them onto the insulating substrates with interdigital Pt and Au electrodes. The electric currents are found dramatically dependent on the variation of humidity, temperature, and ratio of oxygen to nitrogen. In the end, the HCHO gas sensitivity of these nanoparticles has been investigated.