High performance UV sensor based on individual ZnO nanowire and photoelectric properties of individual ZnO nanowire surface in different atmospheres

Ate, Abdelrahim; Zhu, Huichao; Cai, Haiyuan; Quan, Xiaotong; Wang, Xiaojiao; Jia, Xiaoning; Zhang, Jiaqi; Wang, Kaili; Jia, Xiaokai; Tang, Zhiyuan

doi:10.1063/1.4866729

Cited by 9 publications

(8 citation statements)

References 15 publications

(16 reference statements)

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“…Various groups have employed the UV photoresponse behaviors of ZnO in different environments of argon, nitrogen, oxygen gases, etc. [36,37]. It has been observed that oxygen gas in particular plays a major role in the photoresponse mechanism in wideband-gap semiconducting oxide nanomaterials during UV exposure.…”

Section: Resultsmentioning

confidence: 99%

Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector

2016

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A heterostructure of graphene and zinc oxide (ZnO) nanowires (NWs) is fabricated by sandwiching an array of ZnO NWs between two graphene layers for an ultraviolet (UV) photodetector. This unique structure allows NWs to be in direct contact with the graphene layers, minimizing the effect of the substrate or metal electrodes. In this device, graphene layers act as highly conducting electrodes with a high mobility of the generated charge carriers. An excellent sensitivity is demonstrated towards UV illumination, with a reversible photoresponse even for a short period of UV illumination. Response and recovery times of a few milliseconds demonstrated a much faster photoresponse than most of the conventional ZnO nanostructure-based photodetectors. It is shown that the generation of a built-in electric field between the interface of graphene and ZnO NWs effectively contributes to the separation of photogenerated electron-hole pairs for photocurrent generation without applying any external bias. Upon application of external bias voltage, the electric field further increases the drift velocity of photogenerated electrons by reducing the charge recombination rates, and results in an enhancement of the photocurrent. Therefore, the graphene-based heterostructure (G/ZnO NW/G) opens avenues to constructing a novel heterostructure with a combination of two functionally dissimilar materials.

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Section: Resultsmentioning

confidence: 99%

Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector

2016

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“…Typically, oxygen adsorption and desorption processes are always considered to be closely related to the carrier recombination dynamics of metal-oxide-based photodetectors. − Here, to further clarify the principle of photoconduction of InGaZnO NW devices, a proposal of the photoconduction mechanism is reinforced in Figure . In the dark environment, there would be a large amount of ambient oxygen molecules adsorbed onto the NW channel surface, in which these molecules capture surface free electrons to become O 2 – ; therefore, a depletion layer results on the NW surface to yield the low conductivity (Figure a).…”

Section: Resultsmentioning

confidence: 99%

High-Performance Transparent Ultraviolet Photodetectors Based on InGaZnO Superlattice Nanowire Arrays

Meng

Dong

et al. 2019

ACS Nano

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Due to the efficient photocarrier separation and collection coming from their distinctive band structures, superlattice nanowires (NWs) have great potential as active materials for high-performance optoelectronic devices. In this work, InGaZnO NWs with superlattice structure and controllable stoichiometry are obtained by ambient-pressure chemical vapor deposition. Along the NW axial direction, perfect alternately stacking of InGaO(ZnO) 4 + blocks and InO 2 − layers is observed to form a periodic layered structure. Strikingly, when configured into individual NW photodetectors, the Ga concentration is found to significantly influence the amount of oxygen vacancies and oxygen molecules adsorbed on the NW surface, which dictate the photoconducting properties of the NW channels. Based on the optimized Ga concentration (i.e., In 1.8 Ga 1.8 Zn 2.4 O 7 ), the individual NW device exhibits an excellent responsivity of 1.95 × 10 5 A/W and external quantum efficiency of as high as 9.28 × 10 7 % together with a rise time of 0.93 s and a decay time of 0.2 s for the ultraviolet (UV) photodetection. Besides, the obtained NWs can be fabricated into large-scale parallel arrays on glass substrates as well to achieve fully transparent UV photodetectors, where the performance is on the same level or even better than many transparent photodetectors with high performance. All the results discussed above demonstrate the great potential of InGaZnO superlattice NWs for next-generation advanced optoelectronic devices.

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“…ZnO NRs/NWs are extensively applied in various sensing applications fields, e.g. biosensors [44][45][46][47][48][49][50][51], biomarker [52][53], drug delivery [54][55] , chemical sensors [56][57][58], gas sensors [59][60], pH sensors [61], humidity sensor [62][63][64], UV sensors [65][66][67][68][69], temperature sensors [70][71], and pressure/force/mass/load sensors [72][73][74][75]. Also, the high performances of several types of sensors have been enhanced by utilizing different metals doped ZnO nanorods, e.g.…”

Section: Sensing Applications Based On Zno and Tm-doped Zno Nanostrucmentioning

confidence: 99%

Synthesis of ZnO and transition metals doped ZnO nanostructures, their characterization and sensing applications

Chey

2015

Linköping Studies in Science and Technology. Dissertations

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High performance UV sensor based on individual ZnO nanowire and photoelectric properties of individual ZnO nanowire surface in different atmospheres

Cited by 9 publications

References 15 publications

Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector

Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector

High-Performance Transparent Ultraviolet Photodetectors Based on InGaZnO Superlattice Nanowire Arrays

Synthesis of ZnO and transition metals doped ZnO nanostructures, their characterization and sensing applications

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