Abstract:A heterostructure of graphene and zinc oxide (ZnO) nanowires (NWs) is fabricated by sandwiching an array of ZnO NWs between two graphene layers for an ultraviolet (UV) photodetector. This unique structure allows NWs to be in direct contact with the graphene layers, minimizing the effect of the substrate or metal electrodes. In this device, graphene layers act as highly conducting electrodes with a high mobility of the generated charge carriers. An excellent sensitivity is demonstrated towards UV illumination, … Show more
“…The sensitivity, which is defined as the ratio of photocurrent to the dark current is about 1.7. This value is comparable with the recent excellent reported photodetectors that are synthesized via expensive and complex techniques [45,46,65]. Fig.…”
Section: = /ℎsupporting
confidence: 90%
“…Therefore , photodetectors synthesized at reduced temperatures methods play a key role in cost reduction and open more choices of flexible substrates selection, which are highly desirable in flexible optoelectronics technology. The hydrothermal process is one of the prime candidates that has attracted considerable attention due to its unique advantages such as simplicity, low cost, more controllable and low temperature (< 100 °C) compared with the previously discussed methods. Despite of these research efforts, few reports have studied ZnO-NWs /graphene oxide (GO) sheets system using hydrothermal process, which is likely due to the absence of effective morphological and interfacial control between ZnO nanostructures and graphene [43][44][45][46]. The motivation of this work is to take advantage of the superior optical properties of ZnO nanowires combined with the flexible, transparent and ideal transport properties of graphene into a single device.…”
A new low-cost optimized hydrothermal process of direct synthesis of ZnO nanowires (NWs)/graphene oxide (GO) hybrid on silicon substrates at a low growth temperature (∼60°C) is reported. The careful optimization of the growth conditions and ZnO/GO relative ratios have resulted in high-density ZnO NWs formation with homogenous density and size distributions directly on GO sheets. The fabricated nanocomposites were intensively investigated by employing different structural, optical and electrical characterization techniques such as SEM, EDX, XRD, FTIR, UV-VIS and I-V. SEM analysis showed a formation of highly dense ZnO NWs on GO sheets with homogenous size di stributions with average approximate diameter and length of 70 nm and 310 nm, respectively. The EDX combined with FTIR and XRD measurements confirmed the exact chemical composition of the intended structure. The roomtemperature UV-VIS spectra revealed an enhance optical absorption of UV-light at an absorption band centered at 370 nm. Under UV-excitation a significant photocurrent increase has been observed. This is can be attributed to the large surface to volume ratio in ZnO-NWs structure, which is associated with oxygen desorption at the large ZnO-NWs surfaces that reduces the recombination rate of photogenerated free charge carriers. The optimum electrical and optical properties of the device have been observed at ZnO-NWs/Go relative ratio of 1:5. These findings could be promising for potential enhanced UV-detectors and flexible optoelectronics devices.
“…The sensitivity, which is defined as the ratio of photocurrent to the dark current is about 1.7. This value is comparable with the recent excellent reported photodetectors that are synthesized via expensive and complex techniques [45,46,65]. Fig.…”
Section: = /ℎsupporting
confidence: 90%
“…Therefore , photodetectors synthesized at reduced temperatures methods play a key role in cost reduction and open more choices of flexible substrates selection, which are highly desirable in flexible optoelectronics technology. The hydrothermal process is one of the prime candidates that has attracted considerable attention due to its unique advantages such as simplicity, low cost, more controllable and low temperature (< 100 °C) compared with the previously discussed methods. Despite of these research efforts, few reports have studied ZnO-NWs /graphene oxide (GO) sheets system using hydrothermal process, which is likely due to the absence of effective morphological and interfacial control between ZnO nanostructures and graphene [43][44][45][46]. The motivation of this work is to take advantage of the superior optical properties of ZnO nanowires combined with the flexible, transparent and ideal transport properties of graphene into a single device.…”
A new low-cost optimized hydrothermal process of direct synthesis of ZnO nanowires (NWs)/graphene oxide (GO) hybrid on silicon substrates at a low growth temperature (∼60°C) is reported. The careful optimization of the growth conditions and ZnO/GO relative ratios have resulted in high-density ZnO NWs formation with homogenous density and size distributions directly on GO sheets. The fabricated nanocomposites were intensively investigated by employing different structural, optical and electrical characterization techniques such as SEM, EDX, XRD, FTIR, UV-VIS and I-V. SEM analysis showed a formation of highly dense ZnO NWs on GO sheets with homogenous size di stributions with average approximate diameter and length of 70 nm and 310 nm, respectively. The EDX combined with FTIR and XRD measurements confirmed the exact chemical composition of the intended structure. The roomtemperature UV-VIS spectra revealed an enhance optical absorption of UV-light at an absorption band centered at 370 nm. Under UV-excitation a significant photocurrent increase has been observed. This is can be attributed to the large surface to volume ratio in ZnO-NWs structure, which is associated with oxygen desorption at the large ZnO-NWs surfaces that reduces the recombination rate of photogenerated free charge carriers. The optimum electrical and optical properties of the device have been observed at ZnO-NWs/Go relative ratio of 1:5. These findings could be promising for potential enhanced UV-detectors and flexible optoelectronics devices.
“…Quantitatively, the photocurrent is directly proportional to photogenerated carriers, which are generated mainly from the photoelectric effect (PE) and/or PTE contribution. 30,31 For the PTE effect, the photogenerated carriers are further generated by contributions from photoexcited hot carriers. 18 Substrate removal of graphene materials largely reduces the undesirable energy loss of photoexcited hot carriers from surface phonons of the substrate.…”
Broadband responsivity enhancement of substrate-free device is achieved from the ultraviolet to near-infrared range just by removing the substrate of rGO film device.
“…Among different nanostructures, ZnO nanoparticles (ZnO‐NPs) with uniform particle radius close to the Debye length (∼19 nm) have the most favorable morphology to take full advantage of the electron depletion effect, which is the key to high detection performance such as photoresponsivity ( R ), I Ph / I Dark , and detectivity ( D *) of the ZnO‐NP photodetectors, orders of magnitudes higher than that on their bulk counterparts . However, the fabrication of high‐crystallinity ZnO‐NPs is typically time‐consuming through a sequence of processes including synthesis, separation and dispersion of ZnO‐NPs and subsequent assembly of a thin film on target substrates with prepatterned electrodes followed by a thermal posttreatment, making it unattractive for large‐scale production . In particular, these processes are not suitable for monolithic printable devices on functional substrates such as complementary metaloxide semiconductor.…”
Zinc oxide (ZnO) nanoparticles (NPs) with uniform particle radius comparable to the desired Debye length provide a low-cost and a scalable scheme to achieve optimized electron depletion effect, which is the key to high performance ultraviolet (UV) photodetection. Here, a simple and improved sol-gel method for in situ synthesis of highly crystalline constituent ZnO-NP mesoporous thin films is reported. In combination with optimal oxygen plasma treatment to activate the ZnO-NP surface, the UV-detection performance is enhanced remarkably with a reduced dark current by one order of magnitude and an increased UV detectivity by over 300%. Moreover, such UV photodetector s exhibit extraordinary performance with high responsivity of up to 0.8 A W À1 V À1 at 340 nm UV power of 0.003 mW cm À2 , detectivity of 1.4 Â 10 11 Jones, and rise/decay time of 3.4 s/5.0 s. These results illustrate that the sol-gel ZnO-NP films provide a promising template for highperformance UV detectors to take full advantages of the electron depletion effect.
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