Resistance switching of copper doped MoOx films for nonvolatile memory applications

Abstract

Nonvolatile and reversible resistance switching of copper doped MoOx film was studied. Hysteretic-type resistive switching was observed under dc. Reproducible resistance switching over 106cycles was observed under alternative voltage pulses. Two resistance states can be maintained for 25h at 85°C. The authors proved that resistance switching might be strongly related with the rupture and generation of multifilaments confirmed by spreading resistance images of a conducting atomic force microscope as well as filamentary conduction by double logarithmic plots. Based on the x-ray photoelectron spectroscopy analysis, local conducting filaments could be formed by thermally diffused copper into MoOx film from the bottom electrode.

Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

“…[18][19][20][21][22][23][24][25][26][27][28] The resistance switching is considered to occur because of the formation and rupture (or shrinkage) of CFs composed of Cu (or Ag), and this type of ReRAM is called the conductive bridge RAM (CBRAM). The molybdenum oxide (MoO x )-based device with the Cu electrode investigated in this report is a type of CBRAM, 29 while MoO x shows ReRAM switching behaviour even without the Cu electrode. 30 Here, the ReRAM operation of the Cu/MoO x /TiN structure is briefly described based on the assumption of the conventional electrochemical model for the CBRAM, 6,8,12,13 where Cu is the active top electrode (TE) and TiN is the inactive bottom electrode (BE).…”

Filament formation and erasure in molybdenum oxide during resistive switching cycles

“…The current-voltage (I-V) curve exhibits hysteresis that can be exploited in nonvolatile ReRAMs. Since an early report of a Perovskite-type oxide, 7 various materials including binary oxides [8][9][10][11][12][13] and solid electrolytes [14][15][16][17][18][19][20][21][22][23][24] have been reported on this switching operation. The pristine state is typically HRS.…”

“…Here, Cu was an active TE, MoO x was a switching layer, 17,21 and TiN was an inert BE. Multiple bipolar I-V cycles were realized during the TEM observation.…”

Memristor Device Engineering and CMOS Integration for Reconfigurable Logic Applications

“…A wide variety of materials have been demonstrated with memristive behavior recently and they can be roughly categorized as transition metal oxides (such as NiO [31], CuO [32], MoO x [33], ZrO 2 [34], TiO 2 [4,35,36], TaO x [18,37]), perovskites [38,39], and solid-state electrolytes [40] and even Si and SiO 2 , etc. [20,[41][42][43].…”