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This paper describes the resistive switching of a cross-point cell array device, with a junction area of 100 nm x 100 nm, fabricated using ultraviolet nanoimprinting. A GdO(x) and Cu-doped MoO(x) stack with platinum top and bottom electrodes served as the resistive switching layer, which shows analog memory characteristics with a resistance ratio greater than 10. To demonstrate a neural network circuit, we operated the cell array device as an electrically modifiable synapse array circuit and carried out a weighted sum operation. This demonstration of cross-point arrays, based on resistive switching memory, opens the way for feasible ultra-high density synapse circuits for future large-scale neural network systems.

Materials showing reversible resistance switching between high-resistance state and low-resistance state at room temperature are attractive for today’s semiconductor technology. In this letter, the reproducible hysteresis and resistive switching characteristics of metal-CuxO-metal (M-CuxO-M) heterostructures driven by low voltages are demonstrated. The fabrication of the M-CuxO-M heterostructures is fully compatible with the standard complementary metal-oxide semiconductor process. The hysteresis and resistive switching behavior are discussed. The good retention characteristics are exhibited in the M-CuxO-M heterostructures by the accurate controlling of the preparation parameters.

Nonvolatile and reversible resistance switching of copper doped MoOx film was studied. Hysteretic-type resistive switching was observed under dc. Reproducible resistance switching over 106cycles was observed under alternative voltage pulses. Two resistance states can be maintained for 25h at 85°C. The authors proved that resistance switching might be strongly related with the rupture and generation of multifilaments confirmed by spreading resistance images of a conducting atomic force microscope as well as filamentary conduction by double logarithmic plots. Based on the x-ray photoelectron spectroscopy analysis, local conducting filaments could be formed by thermally diffused copper into MoOx film from the bottom electrode.

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