Realization of vertical resistive memory (VRRAM) using cost effective 3D process

Baek, In-Gyu; J., Park, C.; Ju, Hyunsu; Seong, Dong-jun; Ahn, Hyun Kyong; Kim, J. H.; Yang, Mei‐Due; Song, Sang-Bin; Kim, E. M.; Park, S. O.; Park, Chul Hong; Song, Chang-Lyong; Jeong, Gitae; Choi, Seong Man; Kang, Ho–Kyu; Chung, Chul

doi:10.1109/iedm.2011.6131654

Cited by 120 publications

(55 citation statements)

References 2 publications

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“…[1,3] Various physical phenomena are known to lead to a non-volatile resistive switching effect which are related to different types of RRAM such as Thermo Chemical Memories (TCM) or Valency Change…”

Section: Introductionmentioning

confidence: 99%

Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

Deleruyelle

Putero

Ouled-Khachroum

et al. 2013

Solid-State Electronics

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This paper shows that the well-know chalcogenide Ge 2 Sb 2 Te 5 (GST) in its amorphous state may be advantageously used as solid electrolyte material to fabricate Conductive-Bridge Random Access Memory (CBRAM) devices. GST layer was sputtered on preliminary inkjet-printed silver lines acting as active electrode on either silicon or plastic substrates. Whatever the substrate, the resistance switching is unambiguously attested at a nanoscale by means of conductive-atomic force microscopy (C-AFM) using a Pt-Ir coated tip on the GST surface acting as a passive electrode. The resistance change is correlated to the appearance or disappearance of concomitant hillocks and current spots at the surface of the GST layer. This feature is attributed to the formation/dissolution of a silver-rich protrusion beneath the AFM tip during set/reset operation. Beside, this paper constitutes a step toward the elaboration of crossbar memory arrays on flexible substrates since CBRAM operations were demonstrated on W/GST/Ag crossbar memory cells obtained from an heterogeneous fabrication process combining physical deposition and inkjet-printing.

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Section: Introductionmentioning

confidence: 99%

Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

Deleruyelle

Putero

Ouled-Khachroum

et al. 2013

Solid-State Electronics

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“…Inserting a second oxide layer at the interface will solve the problem. Since the other target of ReRAM applications is a high-density memory to replace NAND Flash memory, the development of the 1 Diode/1 Resistor (1D1R) operation, the cross-point operation and the vertical 3D-stack technology must be accelerated [29].…”

Section: Improvement Of Memory Performancementioning

confidence: 99%

ReRAM technology; challenges and prospects

Akinaga

Shima

2012

IEICE Electron. Express

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Abstract:We review recent progresses in Resistive Random Access Memory (ReRAM) technologies together with difficult challenges and prospects. ReRAM is one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, a brief historical overview of the research is provided. The technological overview is reported with the epoch-making achievements. Second, the current understanding in terms of the operation mechanism is shown followed by the technical assessment, especially the advantages of ReRAM. Finally, we summarize the challenges facing the ReRAM technology and the prospects. Keywords: nonvolatile memories, resistance switching, functional oxides, electrochemical devices, redox reaction Classification: Electron devices, circuits, and systems References

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“…One of the possible solutions is an annealing of ALD dielectric in reducing atmosphere accompanied with in situ top electrode deposition (TiN) [8]. Another interesting approach is a using of two layer or multilayer ALD Ta 2 O 5 based dielectrics with emphasizing on interface chemical interactions [3,9]. However, the composition of the layers is concealed in these works, thus the clear understanding and particularly the modeling of resistive switching in such stacks become rather difficult.…”

Section: Introductionmentioning

confidence: 98%

“…Since 3-D V-NAND Flash memory has been introduced to the market the concept of Vertical ReRAM is also considered to be more cost-effective for the industrial application [3]. However, V-ReRAM architecture requires high conformal deposition of both dielectric and conductive layers on the high aspect ratio substrates.…”

Section: Introductionmentioning

confidence: 99%

Full ALD Ta 2 O 5 -based stacks for resistive random access memory grown with in vacuo XPS monitoring

Egorov

Lebedinskiǐ

Markeev

et al. 2015

Applied Surface Science

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Realization of vertical resistive memory (VRRAM) using cost effective 3D process

Cited by 120 publications

References 2 publications

Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

ReRAM technology; challenges and prospects

Full ALD Ta 2 O 5 -based stacks for resistive random access memory grown with in vacuo XPS monitoring

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