Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

Arita, Masashi; Ohno, Yuichi; Murakami, Yosuke; Takamizawa, Keisuke; Tsurumaki‐Fukuchi, Atsushi; Takahashi, Yasuo

doi:10.1039/c6nr02602h

Cited by 19 publications

(26 citation statements)

References 72 publications

(125 reference statements)

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“…Cyclic endurance properties of the Pt/MoOx/TiN CBRAM system. Reprinted from [31] with permissionThe first CBRAM cyclic switching characteristics were observed by through the use of the Pt/MoOx/TiN CBRAM system in which the MoOx layer was used as a solid electrolyte[31][32][33][34].…”

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confidence: 99%

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Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices

et al. 2017

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Correspondence to: yuchaoyang@pku.edu.cn (Y.Y.), y-taka@ist.hokudai.ac.jp (Y.T.), arita@nano.ist.hokudai.ac.jp (M.A.), m.moors@fz-juelich.de (M.M.), a.kenyon@ucl.ac.uk (A.J.K.)Abstract Memristors or memristive devices are two-terminal nanoionic systems whose resistance switching effects are induced by ion transport and redox reactions in confined spaces down to nanometre or even atomic scales. Understanding such localized and inhomogeneous electrochemical processes is a challenging but crucial task for continued applications of memristors in nonvolatile memory, reconfigurable logic, and brain inspired computing. Here we give a survey for two of the most powerful technologies that are capable of probing the resistance switching mechanisms at the nanoscaletransmission electron microscopy, especially in situ, and scanning tunneling microscopy, for memristive systems based on both electrochemical metallization and valence changes. These studies yield rich information about the size, morphology, composition, chemical state and 2 growth/dissolution dynamics of conducting filaments and even individual metal nanoclusters, and have greatly facilitated the understanding of the underlying mechanisms of memristive switching.Further characterization of cyclic operations leads to additional insights into the degradation in performance, which is important for continued device optimization towards practical applications.Resistive Random Access Memories (ReRAMs), or memristors [1], have tremendous potential for applications in nonvolatile embedded or storage class memories [2, 3], as well as in-memory logic that overcomes the von Neumann bottleneck [4]. They are also envisaged to form the basis of power-efficient neuromorphic systems by implementing plasticity similar to that of biological synapses [5]. Consequently, extensive efforts have been devoted to research into this novel class of devices, including studies of switching materials, device structures, scalability, integration, and so on.In particular, it is very important to understand the fundamental operation mechanisms of ReRAM in order to guide device-related studies. It is well known that the resistance switching effects in memristors are usually modulated by ionic transport and subsequent conducting filament formation/dissolution processes occurring at dimensions around 10 nm, and even down to atomic scales [6][7][8], hence elucidating the switching mechanisms requires advanced characterization techniques capable of resolving the nanoscale switching regions formed randomly in the devices.Here we give a survey of two of the most important technologies in understanding the switching mechanisms of ReRAMtransmission electron microscopy (TEM), especially when applied in situ, and scanning tunneling microscopy (STM). We will discuss the principles and designs behind these techniques, and show how they have furthered the understanding of the nature and dynamic evolution of conductive filaments. Finally, the remaining challenges in the understanding of memristive mechanisms w...

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“…[31]. TEM time-resolved images in which Cu-like filaments were cyclically formed and dissolved between the top and bottom electrodes were reported.…”

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Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices

et al. 2017

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“…For filling the lack of this knowledge, we have performed in situ TEM of SET/RESET and/or multiple switching cycles for an uncovered solid electrolyte, stacked CBRAMs, and nanofabricated CBRAM cells. In this contribution, we will review our work in these years [25,29,[39][40][41][42][43][44] and discuss the role of the filament at SET/RESET, the filament growth/erasure mode influenced by the switching history, the CBRAM degradation, and the localization of the filament to achieve stable switching.…”

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“…In this section, the filament dynamics and its mechanism are demonstrated. The CBRAM discussed here is mainly the device having the MoO x [29,41,43,44].…”

Section: Switching Operation Of Stacked Cbrammentioning

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Nanoscale Switching and Degradation of Resistive Random Access Memory Studied by In Situ Electron Microscopy

Arita¹,

Tsurumaki‐Fukuchi²,

Takahashi³

2018

Memristor and Memristive Neural Networks

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The metal-filament-type resistive random access memories (ReRAMs) with copper were investigated from the point of view of dynamical microstructure evolution in the repetitive switching operations using in situ transmission electron microscopy (in situ TEM). Through a series of experiments for uncovered solid electrolyte films, stacked devices, and nanofabricated cells, formation and erasure of the copper filaments and deposits were confirmed. The behavior of the filament and deposit depended on the switching condition and history. Based on these in situ TEM results, the switching schematics and the degradation process were discussed.

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Probing Electrochemistry at the Nanoscale: In Situ TEM and STM Characterizations of Conducting Filaments in Memristive Devices

Yang

Takahashi

Tsurumaki‐Fukuchi

et al. 2021

Electronic Materials: Science &Amp; Technology

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Memristors or memristive devices are two-terminal nanoionic systems whose resistance switching effects are induced by ion transport and redox reactions in confined spaces down to nanometre or even atomic scales. Understanding such localized and inhomogeneous electrochemical processes is a challenging but crucial task for continued applications of memristors in nonvolatile memory, reconfigurable logic, and brain inspired computing. Here we give a survey for two of the most powerful technologies that are capable of probing the resistance switching mechanisms at the nanoscaletransmission electron microscopy, especially in situ, and scanning tunneling microscopy, for memristive systems based on both electrochemical metallization and valence changes. These studies yield rich information about the size, morphology, composition, chemical state and 2 growth/dissolution dynamics of conducting filaments and even individual metal nanoclusters, and have greatly facilitated the understanding of the underlying mechanisms of memristive switching.Further characterization of cyclic operations leads to additional insights into the degradation in performance, which is important for continued device optimization towards practical applications.

show abstract

Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

Cited by 19 publications

References 72 publications

Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices

Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices

Nanoscale Switching and Degradation of Resistive Random Access Memory Studied by In Situ Electron Microscopy

Probing Electrochemistry at the Nanoscale: In Situ TEM and STM Characterizations of Conducting Filaments in Memristive Devices

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