Representation of heterostructure electrically doped nanoscale tunnel FET with Gaussian-doping profile for high-performance low-power applications

Abstract

In this paper, a gallium antimonide junctionless tunnel field-effect transistor based on electrically doped concept (GaSb-EDTFET) is studied and simulated. The performance of the device is analyzed based on the energy band diagram and electric field profile. The on-current, transconductance, and cutoff frequency are enhanced in case of GaSb-EDTFET compared with Si-EDTFET due to the combination of the high tunneling efficiency of the narrow bandgap and the high-electron mobility of GaSb. On the other hand, the Gaussian-doping profile decreases the ambipolar and off current by increasing the tunneling barrier length at the drain/channel interface. Hence, applying Gaussian-doping profile on GaSb-EDTFET makes it a suitable candidate for analog and digital applications. Next, heterostructure channel/source interface EDTFET is studied which uses GaSb for the source and AlGaSb for the drain and channel regions. Then, it has been optimized by numerical simulation in terms of aluminum (Al) composition. The optimal Al composition was founded to be around 10% (x = 0.1). It is shown that the blend of Gaussian-doping profile and the heterostructure channel/source interface with optimal Al composition remarkably reduces ambipolar current amount to a value of 1.3 × 10 −23 A/μm. The improvements in terms of I off , I on , I on /I off rate, subthreshold swing, transconductance, cutoff frequency, and also suppressed ambipolar behavior are illustrated by numerical simulations.

Graphene Structures-Based 2D Nanotransistors (Review)

“…The ( ) E p Thermal emission (a) ) provides an additional increase in the barrier height for holes injected from the drain region. Note that similar application of the concept of electrostatic carrier doping [58][59][60][61][62] together with the use of gate insulators with a high permittivity (for example, ε ∼ 25 for HfO 2 ) in tunneling and MOSFET transistors based on silicon structures make it possible to reach record-high ON/OFF ratios of ∼7.8 × 10 10 [61].…”

Low leakage pocket junction-less DGTFET with biosensing cavity region

“…Narrow band gap III-V materials have the potential to optimize thin body TFET performance [5,6] with adequate improvement in tunneling properties. GaSb-EDTFET was presented with enhanced on-state current, transconductance, and cut-off frequency due to high tunneling efficiency and the high-electron mobility of GaSb compared with Si-EDTFET [7]. A quantum model with atomistic simulations was used to characterize the subthreshold performance of GaSb, InAs, and InGaAs TFET (heterojunction TFET) [8][9][10].…”