Remote polar phonon scattering in Si inversion layers

Moore, B.; Ferry, D. K.

doi:10.1063/1.327988

Cited by 55 publications

(25 citation statements)

References 9 publications

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“…[4][5][6][7] The other is remote optical phonon scattering that has been previously studied by Wang and Mahan, 8 Hess and Vogl, 9 and Moore and Ferry. 10 Fischetti et al 11 noticed that a high dielectric constant means that there are atomic groups in the material which are easily polarized. Easy polarization in its turn means that the frequency of relevant optical phonons is small.…”

Section: Introductionmentioning

confidence: 99%

Remote phonon scattering in field-effect transistors with a high κ insulating layer

Laikhtman

Solomon

2008

Journal of Applied Physics

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Section: Introductionmentioning

confidence: 99%

Remote phonon scattering in field-effect transistors with a high κ insulating layer

Laikhtman

Solomon

2008

Journal of Applied Physics

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“…Electrons in the semiconductor can also remotely excite polar optical phonon modes in the dielectrics [13][14][15][16][17][18][19]. Such long-range interactions become stronger as the thickness of the semiconductor layer decreases.…”

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confidence: 99%

Charge Scattering and Mobility in Atomically Thin Semiconductors

2014

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The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer semiconductors are evaluated. The roles of individual scattering rates are tracked as the 2D electron gas density is varied over orders of magnitude at various temperatures. From a comparative study of the individual scattering mechanisms, we conclude that all current reported values of mobilities in atomically thin transition-metal dichalcogenide semiconductors are limited by ionized impurity scattering. When the charged impurity densities are reduced, remote optical phonon scattering will determine the ceiling of the highest mobilities attainable in these ultrathin materials at room temperature. The intrinsic mobilities will be accessible only in clean suspended layers, as is also the case for graphene. Based on the study, we identify the best choices for surrounding dielectrics that will help attain the highest mobilities.Comment: 11 pages, 6 figure

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“…Although pristine‐Al was used for the designed Al/Gr/Al interface, amorphous alumina could not be absolutely avoided in the practical Al/Gr/Al interface, which prevents clean contact between the carbon atoms and aluminum atoms. The existence of a small amount of amorphous alumina at the interface not only inhibits the transfer of doped electrons from the metal surface to graphene but also intensifies the scattering of charge carriers on phonons and reduces the mobility in graphene. The removal of alumina on the surface of Al foil and the prevention of aluminum matrix oxidation during the introduction of graphene are the key to reduce the impurities of alumina in the interface of composite materials.…”

Section: Discussionmentioning

confidence: 99%

The Influence of Interface Structure on the Electrical Conductivity of Graphene Embedded in Aluminum Matrix

Cao

Luo

Xie

et al. 2019

Adv Materials Inter

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applications to enhance its mechanical strength, but alloying is detrimental for high electrical conductivity because of more electron scattering centers. [3,4] Therefore, achieving electrical conductivity at a level beyond that of pure aluminum in practical applications is a major challenge.Composite fabrication by incorporating ultrahigh conductive reinforcement with a metal matrix is considered a possible approach to improve the electrical conductivity of metals. [5] Graphene has excellent intrinsic electrical properties and is one of the most promising candidates for such purposes. [6,7] An electron mobility (µ) of ≈2.0 × 10 5 cm 2 V −1 s −1 was measured in a suspended graphene with a carrier density (n) of ≈10 12 cm --2 at room temperature, [8,9] exceeding the record of ≈7.7 × 10 4 cm 2 V −1 s −1 reported for InSb. [10] According to the equation σ = enµ (e is the electron charge, ≈1.6021766209 × 10 −19 C), the electrical conductivity (σ) of the graphene is calculated to be 96 × 10 6 S m −1 , [11] which is ≈170% higher than that of aluminum. Therefore, it is possible to improve the electrical conductivity of aluminum by incorporating graphene.However, such improvement is not easy to achieve in practical graphene/aluminum matrix composites. [12,13] The challenges lie in the following factors. First, the forementioned intrinsically high electrical conductivity of a single graphene layer strongly depends on its fabrication method, structural integrity, [14][15][16] intrinsic defects, [17][18][19][20] chemical contamination, [21][22][23][24] and the substrates used to support graphene. [25][26][27][28][29] Second, to exert the intrinsic electrical properties of graphene at macroscopic level (such as in bulk graphene/aluminum matrix composites), fabrication methods have to be developed for achieving homogenous dispersion of graphene in metals without damage and good electrical contact between graphene and metals. Because of these complex prerequisites, the electrical conductivity of almost all the reported graphene/metal matrix composites does not exceed that of the pure matrix. As an exception, Pan et al. [30] reported conductivity enhancement in graphene/copper matrix composites based on highquality graphene. The quality of reduced graphene oxide (GO) was improved by heat treatment at high temperature and high pressure, and then high-quality graphene was incorporated in a copper matrix by a ball-milling process. As a result, an Graphene is considered a promising reinforcement to improve the electrical conductivity of metals because of its excellent intrinsic electrical conductivity. However, graphene/Al matrix composites with enhanced electrical conductivity have not yet been reported. In this work, it is attempted to understand the factors influencing the electrical conductivity of graphene embedded in an Al matrix by adjusting the interfacial structure and composition. By sandwiching graphene (Gr) or graphene oxide (GO) with either pristine or passivated Al foils, three kinds of typical composite interfaces ar...

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Remote polar phonon scattering in Si inversion layers

Cited by 55 publications

References 9 publications

Remote phonon scattering in field-effect transistors with a high κ insulating layer

Remote phonon scattering in field-effect transistors with a high κ insulating layer

Charge Scattering and Mobility in Atomically Thin Semiconductors

The Influence of Interface Structure on the Electrical Conductivity of Graphene Embedded in Aluminum Matrix

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