Remote phonon scattering in field-effect transistors with a high κ insulating layer

Laikhtman, B.; Solomon, P. M.

doi:10.1063/1.2826951

Cited by 26 publications

(13 citation statements)

References 30 publications

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“…His approach has been applied to coulomb drag in various heterostructures, e.g., Refs. [42,43], and also to remote phonon scattering, the interaction of a 2DEG with the surrounding optical phonons [44]. We will refer to this as screened interface phonon scattering.…”

Section: Screened Interface Polar Phonon Scatteringmentioning

confidence: 99%

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Scattering of carriers by coupled plasmon-phonon modes in bulk polar semiconductors and polar semiconductor heterostructures

Hauber

Fahy

2017

Phys. Rev. B

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Original citationHauber, A. and Fahy, S. (2017) We present a general treatment of carrier scattering by coupled phonon-plasmon collective modes in polar semiconductors, taking anharmonic phonon decay into account and self-consistently calculating carrier momentum relaxation rates and carrier mobility in a parabolic band model. We iteratively solve the weak-field Boltzmann equations for carriers and collective modes and obtain their nonequilibrium distribution functions. Both the scattering rates and the anharmonic decay of the coupled modes are expressed through the total dielectric function of the semiconductor, consisting of a damped lattice dielectric function, and a temperature dependent random phase approximation dielectric function for the carrier plasma. We show that the decay of the coupled modes has a significant effect on the contribution to the mobility limited by carrier-coupled mode scattering. We also propose a scalar quantity, the phonon dissipation weight factor, with which this effect can be estimated from an analytic expression. We apply this treatment to dynamically screened electron-longitudinal optical phonon scattering in bulk polar semiconductors, and to dynamically screened remote phonon scattering in polar heterostructures where monolayers of MoS 2 are sandwiched between various polar dielectrics. We find that a dynamic treatment of the remote phonon scattering yields mobilities up to 75% higher than a static screening approximation does for structures which consist of a monolayer of MoS 2 between hafnia and silica. Moreover, we show that accounting for the nonzero thickness of the MoS 2 interface layer has an important effect on the calculated mobility in the same structure.

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Section: Screened Interface Polar Phonon Scatteringmentioning

confidence: 99%

“…Equation (44) requires two boundary conditions to determine the complex coefficients α and β. For convenience, we introduce the quantity…”

Section: A Solution Of the Poisson Equation In A Heterostructure Of mentioning

confidence: 99%

Scattering of carriers by coupled plasmon-phonon modes in bulk polar semiconductors and polar semiconductor heterostructures

Hauber

Fahy

2017

Phys. Rev. B

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“…[11][12][13][14] However, recent studies predict an influence of SOph on the electron mobility significantly weaker than previously thought. [15][16][17][18] Coulomb centers in the gate stack (RemQ) have also been proposed as a possible cause of the mobility reduction, 4,19 but very large charge densities seem to be necessary to justify the experimental mobility degradation, 15,17 which appear to be inconsistent with the flat band voltage shift [20][21][22] and with direct RemQ density measurements obtained with modified charge pumping methods. 23,24 Furthermore, recent experimental data and atomistic simulations suggest that the mobility degradation could be due to interface dipoles close to the HK/IL interface (DipQ).…”

Section: Introductionmentioning

confidence: 99%

On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

Toniutti

Palestri

Esseni

et al. 2012

Journal of Applied Physics

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We examine the mobility reduction measured in hafnium-based dielectrics in n-and p-MOSFETs by means of extensive comparison between accurate multi-subband Monte Carlo simulations and experimental data for reasonably mature process technologies. We have considered scattering with remote (soft-optical) phonons and remote Coulomb interaction with single layers and dipole charges. A careful examination of model assumptions and limitations leads us to the conclusion that soft optical phonon scattering cannot quantitatively explain by itself the experimental mobility reduction reported by several groups for neither the electron nor the hole inversion layers. Experimental data can be reproduced only assuming consistently large concentrations of Coulomb scattering centers in the gate stack. However, the corresponding charge or dipole density would result in a large threshold voltage shift not observed in the experiments. We thus conclude that the main mechanisms responsible for the mobility reduction in MOSFETs featuring Hafnium-based high-j dielectric have not been completely identified yet. Additional physical mechanisms that could reconcile simulations with experimental results are suggested and critically discussed.

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“…On the other hand, the mobility of H75/A10 above 50 0 C seems to be dominated by the phonon scattering. This difference between HfO 2 and Al 2 O 3 would result from the stronger remote phonon in HfO 2 than that in Al 2 O 3 [8].…”

Section: Resultsmentioning

confidence: 99%

Effects of interfacial layer between high-k gate dielectric and InGaAs surface on its inversion layer electron mobility

Oda¹,

Irisawa²,

Kamimuta³

et al. 2012

Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials

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Remote phonon scattering in field-effect transistors with a high κ insulating layer

Cited by 26 publications

References 30 publications

Scattering of carriers by coupled plasmon-phonon modes in bulk polar semiconductors and polar semiconductor heterostructures

Scattering of carriers by coupled plasmon-phonon modes in bulk polar semiconductors and polar semiconductor heterostructures

On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

Effects of interfacial layer between high-k gate dielectric and InGaAs surface on its inversion layer electron mobility

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