Effects of interfacial layer between high-k gate dielectric and InGaAs surface on its inversion layer electron mobility

Comparison of the interface and border traps of nanolaminate and bilayer structures of Al2O3 and HfO2 on In0.53Ga0.47As

“…From the literature, it has also reported that the D it is comparatively higher in thinner oxide case than thicker one. [31][32][33][34] Figure 5 shows the leakage current and voltage (J-V ) profile under positive bias voltages and a summary of leakage current density and breakdown voltages for all fabricated MOS structures. From Fig.…”

Electron mobility improvement by in situ annealing before deposition of HfO2gate dielectric with equivalent oxide thickness of sub-1.0 nm in In0.53Ga0.47As n-type metal–insulator–semiconductor field-effect transistor

“…In contrast to the low-N s region, the enhancement of the electron mobility in the high-N s region could originate from the reduced surface roughness and/or D it in the conduction band. 10,11,33) Although a further precise study is needed to obtain a deeper understanding of the passivation as well as the mobility enhancement mechanisms, the obtained results clearly demonstrate the effectiveness of the proposed very simple technique to improve the In 0.53 Ga 0.47 As nMISFET performance.…”

“…Figure 4 shows gate-tochannel capacitance (C gc ) characteristics measured at 1 to 100 kHz. It is clearly seen that the annealed sample had a much smaller frequency dispersion around the threshold voltage, which suggests a reduction in D it in the band gap 6,11) and/or a decrease in the defect density (border trap density) in the high-k dielectric. 30,31) This result suggests the effective passivation by the thin interfacial GaO x layer, as suggested by Jevasuwan et al 16) Then, D it was estimated by the conductance method to determine the origin of the decreased frequency dispersion.…”

“…However, the inversion electron mobility of the InGaAs nMISFET with the HfO 2 gate dielectric has been reported to be much lower than that with the Al 2 O 3 gate dielectric. [9][10][11] Thus, the improvement of the interface quality between HfO 2 and InGaAs is important.…”

“…There have been some reports on the improvement of MIS characteristics or inversion electron mobility in In 0.53 Ga 0.47 As nMISFETs with the HfO 2 gate dielectric, for example, by Al 2 O 3 interfacial layer insertion, [11][12][13] PH 3 surface treatment, 14) and F 2 incorporation into HfO 2 . 15) Among these methods, the Al 2 O 3 interfacial layer insertion showed the best interface characteristics.…”