2008
DOI: 10.1109/ted.2008.919710
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Reliability Mechanisms of LTPS-TFT With $\hbox{HfO}_{2}$ Gate Dielectric: PBTI, NBTI, and Hot-Carrier Stress

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Cited by 49 publications
(18 citation statements)
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“…The S.S. degradation and I min increase of n-type LTPS-TFTs after PBTI as shown in Fig. 1 indicates the defect generation of both HfO 2 /poly-Si interface and poly-Si channel film [19,22]. Therefore, the mechanism of PBTI is that the channel electrons are accelerated by the gate voltage to collide with the weak bond of poly-Si and HfO 2 /poly-Si interface and then inject into the HfO 2 , resulting in the generation of oxide charge, interface trap state and poly-Si damage [22].…”
Section: Resultsmentioning
confidence: 94%
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“…The S.S. degradation and I min increase of n-type LTPS-TFTs after PBTI as shown in Fig. 1 indicates the defect generation of both HfO 2 /poly-Si interface and poly-Si channel film [19,22]. Therefore, the mechanism of PBTI is that the channel electrons are accelerated by the gate voltage to collide with the weak bond of poly-Si and HfO 2 /poly-Si interface and then inject into the HfO 2 , resulting in the generation of oxide charge, interface trap state and poly-Si damage [22].…”
Section: Resultsmentioning
confidence: 94%
“…1. The degradation of subthreshold swing S.S. is attributed to the generation of the interface trap states N it of HfO 2 /poly-Si [15][16][17][18][19], which both NBTI and PBTI could degrade the HfO 2 /polySi interface. In addition, the increase of threshold voltage |DV TH | can be attributed to not only the degradation of subthreshold swing S.S. but also the oxide charge trapping in HfO 2 [19].…”
Section: Resultsmentioning
confidence: 99%
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