Reliability improvement of Cu interconnects by additional anneal between Cu CMP and barrier CMP

Harada, Taishi; Kobayashi, Katsuichiro; Takahashi, Minoru; Nii, Keiichi; Ikeda, Akira; Ueda, Tadao; Yabu, Takayuki

doi:10.1109/iitc.2003.1219722

Cited by 4 publications

(2 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the fabrication of Si ultralarge-scale integrated (ULSI) circuits, stress migration (SM), or stress-induced voiding (SIV) is known to be one of the serious reliability issues. [1][2][3][4][5][6][7][8][9][10] It has been reported that the resistance increase in an electric circuit is the result of voiding beneath the via in a lower metal line, [1][2][3][4][5][6][7][8] and voiding inside the via. 5,7,9) Void growth beneath the via is attributed to Cu diffusion into the lower lines, while voiding inside the via is attributed to Cu atoms in the via being pulled up to an upper line.…”

Section: Introductionmentioning

confidence: 99%

Effect of Layout Variation on Stress Migration in Dual Damascene Copper Interconnects

Suzuki

Kouno

Matsuyama

et al. 2008

jjap

View full text Add to dashboard Cite

The effect of layout variation on stress migration (SM) in Cu damascene interconnects was investigated in detail. In an extrusion pattern in which narrow lines are connected to a wide line, the failure rate decreases as the narrow line becomes longer and wider. It was found that there is a maximum failure rate between 150 and 200 °C for all test patterns. The results for the SM failure rate showed that the initial rate of increase of SM failure for the extrusion pattern is much larger than that for the conventional wide pattern. The effect of the narrow linewidth on the SM failure rate cannot be understood by considering the previous diffusion mechanism. Based on these results, the dependence of vacancy diffusion path and SM failure mechanism on the layout variation is discussed.

show abstract

Section: Introductionmentioning

confidence: 99%

Effect of Layout Variation on Stress Migration in Dual Damascene Copper Interconnects

Suzuki

Kouno

Matsuyama

et al. 2008

jjap

View full text Add to dashboard Cite

show abstract

“…Stress migration or stress-induced voiding is one of the serious reliability issues in Si ultralarge-scale integrated fabrication. [1][2][3][4][5][6][7][8][9][10] It has been reported that resistance increase in an electric circuit is the result of voiding beneath the via in a lower metal line, [1][2][3][4][5][6][7][8] and voiding inside the via. 5,7,9) Void growth beneath the via is attributed to Cu diffusion into the lower lines, while voiding inside the via is attributed to Cu atoms in the via being pulled up to an upper line.…”

Section: Introductionmentioning

confidence: 99%

Simple Modeling and Characterization of Stress Migration Phenomena in Cu Interconnects

Tsuchikawa

Mizushima

Nakamura

et al. 2006

jjap

View full text Add to dashboard Cite

Many observations of stress-induced voids beneath vias in wide Cu lines have been performed to analyze stress migration phenomena. Most of the voids that caused fatal failures of circuits accompanied grain boundaries in the lower lines. Finite element method calculations were performed to obtain the stress distribution around a via sandwiched between wide upper and lower lines. Based on these results, a void growth model for the Cu stress migration phenomena has been proposed by applying the Hull and Rimmer theory. This model takes two diffusion paths, such as a grain boundary and a barrier/Cu interface, into consideration. Compared with experimental results, the proposed model successfully explained the mean time to failure dependence on the temperature and geometrical parameters of Cu interconnects.

show abstract

Improvement on the stress migration in tungsten-plug via

Wen

Chien

Guan

et al. 2017

2017 China Semiconductor Technology International Conference (CSTIC)

View full text Add to dashboard Cite

Reliability improvement of Cu interconnects by additional anneal between Cu CMP and barrier CMP

Cited by 4 publications

References 1 publication

Effect of Layout Variation on Stress Migration in Dual Damascene Copper Interconnects

Effect of Layout Variation on Stress Migration in Dual Damascene Copper Interconnects

Simple Modeling and Characterization of Stress Migration Phenomena in Cu Interconnects

Improvement on the stress migration in tungsten-plug via

Contact Info

Product

Resources

About