Relationship Between Propagation Angle of Dislocations in β-Ga2O3 (001) Bulk Wafers and Their Etch Pit Shapes

Isaji, Sou; Maeda, Issei; Ogawa, Naoya; Kosaka, Ryo; Hasuike, Noriyuki; Isshiki, Takaaki; Kobayashi, Kenji; Yao, Yongzhao; Ishikawa, Yukari

doi:10.1007/s11664-023-10363-4

J. Electron. Mater.

2023

DOI: 10.1007/s11664-023-10363-4

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Relationship Between Propagation Angle of Dislocations in β-Ga2O3 (001) Bulk Wafers and Their Etch Pit Shapes

Sou Isaji

Issei Maeda

Naoya Ogawa

et al.

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Cited by 3 publications

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Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect x-ray topography

Yao,

Tsusaka,

Hirano

et al. 2023

Journal of Applied Physics

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Synchrotron radiation x-ray topography (XRT) in a transmission configuration based on the Borrmann effect (BE) was carried out to observe characteristic dislocation structures and three-dimensional distribution and propagation of dislocations in β-Ga2O3 grown via the edge-defined film-fed growth (EFG) method. Substrates with a range of surface orientations of (001), (010), and (2¯01), cut perpendicular or parallel to the ⟨010⟩ growth direction of the EFG, were observed to understand the whole picture of dislocations distributed in the bulk crystals. Using the (001)-oriented substrate, we found characteristic dislocation structures such as dislocation helices, damage-related (001)-plane dislocation networks, and tangled dislocation complexes, which exist universally in EFG crystals but have rarely been reported before. A careful measurement of the dislocation length in BE-XRT images taken with different g-vectors allows us to determine the crystal plane on which a dislocation lies. The BE-XRTs taken from the (010)-oriented and (2¯01)-oriented substrates suggested that the dislocations propagating along the [010] growth direction were dominant. Most of these b-axis threading dislocations had a Burgers vector of [010] or [001], and they tended to align in the (100) plane. The BE-XRT observations in this study provide valuable knowledge for understanding the structure and character of dislocations in β-Ga2O3.

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Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect x-ray topography

Yao,

Tsusaka,

Hirano

et al. 2023

Journal of Applied Physics

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High quality β-Ga2O3 bulk crystals, grown by edge-defined film-fed growth method: Growth features, structural, and thermal properties

Bauman

Panov

Spiridonov

et al. 2023

Journal of Vacuum Science &Amp; Technology A

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Bulk crystals of β-Ga2O3 were successfully grown by the edge-defined film-fed growth method. The crystalline quality of the obtained crystals was analyzed by the method of x-ray diffractometry. The full width at half maximum of the rocking curve was about 72 arcsec. The optical bandgap was determined by analyzing the optical transmission spectra and amounted to 4.7 eV. The hot disk method was used to obtain the thermal conductivity of the sample along the [001] direction in the temperature range from 30 to 120 °C. The maximum value of thermal conductivity obtained at 30 °C was 9.25 W/(m K).

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Prospects for β-Ga₂O₃: now and into the future

Sasaki

2024

Appl. Phys. Express

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This review describes the progress of research on gallium oxide as a material for power devices, covering the development of bulk crystal growth through to epitaxial growth, defect evaluations, device processes and development, all based on the author's research experiences. During the last decade or so, the epi-wafer size has been expanded to 4–6 inches, and Schottky barrier diodes and field-effect transistors capable of ampere-class operation and with breakdown voltages of several kV have been demonstrated. On the other hand, challenges to the practical application of gallium oxide power devices, such as the cost of epi-wafers, killer defects, purity of epitaxial layer, etc., have also become apparent. This paper provides a comprehensive summary of the history of these developments, including not only papers but also patents and conference presentations, and gives my personal views on the prospects for this material’s continued development.

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Relationship Between Propagation Angle of Dislocations in β-Ga2O3 (001) Bulk Wafers and Their Etch Pit Shapes

Cited by 3 publications

References 14 publications

Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect x-ray topography

Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect x-ray topography

High quality β-Ga2O3 bulk crystals, grown by edge-defined film-fed growth method: Growth features, structural, and thermal properties

Prospects for β-Ga₂O₃: now and into the future

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Relationship Between Propagation Angle of Dislocations in β-Ga2O3 (001) Bulk Wafers and Their Etch Pit Shapes

Cited by 3 publications

References 14 publications

Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect x-ray topography

Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect x-ray topography

High quality β-Ga2O3 bulk crystals, grown by edge-defined film-fed growth method: Growth features, structural, and thermal properties

Prospects for β-Ga2O3: now and into the future

Contact Info

Product

Resources

About

Prospects for β-Ga₂O₃: now and into the future