High quality β-Ga2O3 bulk crystals, grown by edge-defined film-fed growth method: Growth features, structural, and thermal properties

Abstract

Bulk crystals of β-Ga2O3 were successfully grown by the edge-defined film-fed growth method. The crystalline quality of the obtained crystals was analyzed by the method of x-ray diffractometry. The full width at half maximum of the rocking curve was about 72 arcsec. The optical bandgap was determined by analyzing the optical transmission spectra and amounted to 4.7 eV. The hot disk method was used to obtain the thermal conductivity of the sample along the [001] direction in the temperature range from 30 to 120 °C. The maximum value of thermal conductivity obtained at 30 °C was 9.25 W/(m K).

A Review of β-Ga2O3 Power Diodes

“…This attribute endows β-Ga2O3 with significant potential in the domain of two-dimensional materials and devices [63][64][65][66]. The growth techniques for β-Ga 2 O 3 single-crystal substrates predominantly encompass the Czochralski method (CZ) [15,18,67], optical floating zone method (OFZ) [68][69][70], vertical Bridgman method (VB) [71][72][73], and edge-defined film-fed growth method (EFG) [17,[74][75][76][77], among which the EFG is the most mature, offering the potential for mass production and cost efficiency. In 2018, Japan's Novel Crystal Technology Inc. (Saitama, Japan) pioneered the fabrication of 6-inch β-Ga 2 O 3 single-crystal substrates using the EFG method.…”