Regrowth of Implanted–Amorphous Si

Abstract

A two dimensional model of nucleation and growth is described which is consistent with the following experimental phenomena observed in the regrowth of ion-implanted silicon: (1) Substrate orientation effect on regrowth kinetics. (2) Impurity effects on regrowth kinetics. (3) The activation energy dependence of regrowth rate. (4) Impurity redistribution and supersaturation effect.