A new method for making shallow p-type junctions

Ling, Peiching; Strathman, M. D.; Ling, Chih Hsiang

doi:10.1109/iit.1998.813893

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)

DOI: 10.1109/iit.1998.813893

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A new method for making shallow p-type junctions

Peiching Ling¹,

M. D. Strathman²,

Chih Hsiang Ling³

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Cited by 4 publications

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Post-annealing effects on shallow-junction characteristics caused by 20keV BGe molecular ion implantation

Liang¹,

Sang²,

Wang³

et al. 2005

Nuclear Instruments and Methods in Physics Research Section B:

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A new method for making shallow p-type junctions

Cited by 4 publications

References 7 publications

Post-annealing effects on shallow-junction characteristics caused by 20keV BGe molecular ion implantation

Post-annealing effects on shallow-junction characteristics caused by 20keV BGe molecular ion implantation

Two-step post-annealing effects on the shallow-junction characteristics produced by BGe molecular ion implantation

Damage characteristics of low-temperature BSi molecular ion implantation in silicon

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