Refractory silicides of titanium and tantalum for low-resistivity gates and interconnects

Murarka, S. P.; Fraser, D. B.; Sinha, A. K.; Levinstein, H. J.

doi:10.1109/t-ed.1980.20049

Cited by 112 publications

(23 citation statements)

References 8 publications

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“…FUSI gate integration is similar to the conventional CMOS process flow. And most FUSI gate electrode are known to have metal-like low resistivities (10-100 lX cm) [283][284][285][286][287][288][289][290][291]. It is also much easier to tune the work function as compared to other metallic gate electrodes [292], including different silicide phases, pre-doing of poly-silicon gate electrodes, controlling the FUSI gate compositions, and so on [247].…”

Section: Fully Silicided (Fusi) Gatesmentioning

confidence: 99%

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Zhu

Sun

et al. 2011

Progress in Materials Science

134

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Section: Fully Silicided (Fusi) Gatesmentioning

confidence: 99%

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Zhu

Sun

et al. 2011

Progress in Materials Science

134

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“…TiSi 2 is an excellent electronic material as it is one of the most conductive silicides (resistivity % 10 mW cm). [6,7] TiSi 2 was also recently shown to be a good photocatalyst for splitting H 2 O by absorbing visible light, which is a promising approach toward solar-generated H 2 as a clean energy carrier.[8] The improved charge-transport properties offered by complex nanoscale structures of TiSi 2 are desirable for nanoelectronics and solar energy harvesting. Their chemical synthesis is thus appealing; however, the synthetic conditions required by the two key features of complex nanostructures, low dimensionality and complexity, seem to contradict each other.…”

mentioning

confidence: 99%

Spontaneous Growth of Highly Conductive Two‐Dimensional Single‐Crystalline TiSi₂ Nanonets

et al. 2008

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Simple nanostructures (e.g. nanowires) form complex nanomaterials when connected by single-crystalline junctions. [1,2] These nanomaterials offer better mechanical strength and superior charge transport while preserving unique properties associated with the small-dimension nanostructure. Tremendous research interest has focused on this new class of materials, especially in the field of electronics [3] and energy applications.[4] The synthesis of these materials is challenging because of their combined features of low dimensionality and high complexity; the former requires growth suppression whereas the latter demands growth enhancement.[5] Here we report our success in growing single-crystalline two-dimensional (2D) networks of TiSi 2 , a free-standing structure that is micrometers wide and long but only approximately 15 nm thick; beams of these networks are nanobelts % 25 nm wide. This new structure can serve as a testing grounds for probing a host of intriguing properties and applications, and the synthesis should inspire work on the growth of complex nanostructures in general.We were motivated to study TiSi 2 by its properties and potential applications as well as its unique crystal structures. TiSi 2 is an excellent electronic material as it is one of the most conductive silicides (resistivity % 10 mW cm). [6,7] TiSi 2 was also recently shown to be a good photocatalyst for splitting H 2 O by absorbing visible light, which is a promising approach toward solar-generated H 2 as a clean energy carrier.[8] The improved charge-transport properties offered by complex nanoscale structures of TiSi 2 are desirable for nanoelectronics and solar energy harvesting. Their chemical synthesis is thus appealing; however, the synthetic conditions required by the two key features of complex nanostructures, low dimensionality and complexity, seem to contradict each other. Growth of onedimensional (1D) features involves promoting additions of atoms or molecules in one direction while constraining those in all other directions; this is often achieved either by surface passivation to increase the energies of sidewall deposition (such as solution-phase synthesis) or by the introduction of impurities to lower the energies of deposition for the selected directions (most notably the vapor-liquid-solid mechanism). [9,10] Complex crystal structures, on the other hand, require controlled growth in more than one direction. The challenge in making 2D complex nanostructures is even greater as it demands more stringent controls over the complexity to limit the overall structure within two dimensions. Indeed, successful chemical syntheses of complex nanostructures have been mainly limited to 3D ones, [11][12][13][14] and demonstrations of 2D nanocrystals are less frequent. Yang et al., for instance, have reported a simple comblike ZnO nanostructure.[15] Multicrystalline nanosheets of tetragonal TiO 2 were also reported. [16,17] The complex TiSi 2 nanostructures of orthorhombic symmetry that we present herein represent a far more complex 2D str...

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“…We were motivated to study TiSi 2 by its properties and potential applications as well as its unique crystal structures. TiSi 2 is an excellent electronic material as it is one of the most conductive silicides (resistivity ≈10 μΩ cm) 6. 7 TiSi 2 was also recently shown to be a good photocatalyst for splitting H 2 O by absorbing visible light, which is a promising approach toward solar‐generated H 2 as a clean energy carrier 8.…”

mentioning

confidence: 99%

Spontaneous Growth of Highly Conductive Two‐Dimensional Single‐Crystalline TiSi₂ Nanonets

et al. 2008

View full text Add to dashboard Cite

Simple nanostructures (e.g. nanowires) form complex nanomaterials when connected by single-crystalline junctions. [1,2] These nanomaterials offer better mechanical strength and superior charge transport while preserving unique properties associated with the small-dimension nanostructure. Tremendous research interest has focused on this new class of materials, especially in the field of electronics [3] and energy applications. [4] The synthesis of these materials is challenging because of their combined features of low dimensionality and high complexity; the former requires growth suppression whereas the latter demands growth enhancement. [5] Here we report our success in growing single-crystalline two-dimensional (2D) networks of TiSi 2 , a free-standing structure that is micrometers wide and long but only approximately 15 nm thick; beams of these networks are nanobelts % 25 nm wide. This new structure can serve as a testing grounds for probing a host of intriguing properties and applications, and the synthesis should inspire work on the growth of complex nanostructures in general.We were motivated to study TiSi 2 by its properties and potential applications as well as its unique crystal structures. TiSi 2 is an excellent electronic material as it is one of the most conductive silicides (resistivity % 10 mW cm). [6,7] TiSi 2 was also recently shown to be a good photocatalyst for splitting H 2 O by absorbing visible light, which is a promising approach toward solar-generated H 2 as a clean energy carrier. [8] The improved charge-transport properties offered by complex nanoscale structures of TiSi 2 are desirable for nanoelectronics and solar energy harvesting. Their chemical synthesis is thus appealing; however, the synthetic conditions required by the two key features of complex nanostructures, low dimensionality and complexity, seem to contradict each other. Growth of onedimensional (1D) features involves promoting additions of atoms or molecules in one direction while constraining those in all other directions; this is often achieved either by surface passivation to increase the energies of sidewall deposition (such as solution-phase synthesis) or by the introduction of impurities to lower the energies of deposition for the selected directions (most notably the vapor-liquid-solid mechanism). [9,10] Complex crystal structures, on the other hand, require controlled growth in more than one direction. The challenge in making 2D complex nanostructures is even greater as it demands more stringent controls over the complexity to limit the overall structure within two dimensions. Indeed, successful chemical syntheses of complex nanostructures have been mainly limited to 3D ones, [11][12][13][14] and demonstrations of 2D nanocrystals are less frequent. Yang et al., for instance, have reported a simple comblike ZnO nanostructure. [15] Multicrystalline nanosheets of tetragonal TiO 2 were also reported. [16,17] The complex TiSi 2 nanostructures of orthorhombic symmetry that we present herein represent a far more complex 2D...

show abstract

Refractory silicides of titanium and tantalum for low-resistivity gates and interconnects

Cited by 112 publications

References 8 publications

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Spontaneous Growth of Highly Conductive Two‐Dimensional Single‐Crystalline TiSi₂ Nanonets

Spontaneous Growth of Highly Conductive Two‐Dimensional Single‐Crystalline TiSi₂ Nanonets

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Refractory silicides of titanium and tantalum for low-resistivity gates and interconnects

Cited by 112 publications

References 8 publications

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Spontaneous Growth of Highly Conductive Two‐Dimensional Single‐Crystalline TiSi2 Nanonets

Spontaneous Growth of Highly Conductive Two‐Dimensional Single‐Crystalline TiSi2 Nanonets

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Spontaneous Growth of Highly Conductive Two‐Dimensional Single‐Crystalline TiSi₂ Nanonets

Spontaneous Growth of Highly Conductive Two‐Dimensional Single‐Crystalline TiSi₂ Nanonets