Reflectivity, Photoelectric Emission, and Work Function of AlSb

Abstract

The reflectivity and photoelectric emission from hp = 2to6 eV, and the work function, have been measured for (110) surfaces of AlSb (p type, iVA = 2Xl0 17 cm~3) cleaved in high vacuum and covered with various amounts of cesium. The yield of the clean surface is similar to that of other measured III-V compounds. The threshold for photoelectric emission is 5.22±0.02 eV, corresponding to excitation from the top of the valence band. With a band gap E g = 1.62 eV, the electron affinity is 3.6 eV. The work function is 4.86±0.05 eV and the Fermi level lies 0.36db0.07 eV above the top of the valence band at the surface. By deposition of cesium, the work function was lowered to 1.37 eV and the resulting yield spectrum shows structure related to that of the reflectivity. The combined results of reflectivity and photoelectric emission are discussed in terms of the band structure of AlSb.

Structural, electrical and optical properties of AlSb thin films deposited by pulsed laser deposition

“…Moreover, both of Al and Sb elemental resources are abundant, low cost and environment-friendly. So AlSb semiconductor is a promising material for photovoltaic application [3,4].…”

Dielectric response of AlSb from 0.7 to 5.0 eV determined by in situ ellipsometry

“…1 Consequently, its optical properties have been studied extensively by many researchers. [2][3][4][5] Some studies of the visible-near UV dielectric properties of AlSb obtained by spectroscopic ellipsometry ͑SE͒ were reported earlier. 6 SE is a well-known method of obtaining pseudodielectric function data ͗͘ = ͗ 1 ͘ +i͗ 2 ͘ directly without the need of Kramers-Kronig analysis.…”

Controlling the Electro-Optical Properties of an AlSb Monolayer with a DLHC Structure through Phosphorus Alloying: A DFT Study

“…It is well known that antimony-based compounds − such as GaSb, InSb, and AlSb are medium- to large-bandgap semiconductors, and they have been shown to have the potential to be alternative low-cost high-temperature semiconducting materials and for Li-ion batteries as an anode material . It is worthy to note that 2D aluminum antimonide (AlSb) has been broadly investigated using experimental and theoretical techniques due to its excellent performance. − According to the literature, the synthesis of single-phase AlSb has been reported to be more challenging than other antimony-based compounds. Recent research has focused on the experimental realization of two important III–V semiconductors, namely, AlSb and InSb, in the DLHC structure.…”