Dielectric response of AlSb from 0.7 to 5.0 eV determined by in situ ellipsometry

Abstract

We present pseudodielectric function data ⟨ε⟩=⟨ε1⟩+i⟨ε2⟩ from 0.7 to 5.0 eV of oxide-free AlSb that are the closest representation to date of the intrinsic bulk dielectric response ε of the material. Measurements were done on a 1.5 μm thick film grown on (001) GaAs by molecular beam epitaxy. Data were obtained with the film in situ to avoid oxidation artifacts. Overlapping critical-point (CP) structures in the E2 energy region were identified by means of band-structure calculations done with the linear augmented Slater-type orbital method. Calculated CP energies agree well with those obtained from data, confirming the validity of the calculations.

Surface Morphology of AlSb on GaAs Grown by Molecular Beam Epitaxy and Real-time Growth Monitoring by in situ Ellipsometry

“…However the trend of surface roughness as the function of T g revealed in the article will be valid again. In addition it is a good agreement that the optimized T g is 530 o C by previous reported SE data of AlSb [17]. From the figure 4(d), the activation energy of surface diffusion can be extracted using the following equation; D = D o exp (-Es/(K b T)) where D, D o, Es, K b and T stand for distance between ripples, constant, surface diffusion activation energy, substrate temperature in K, respectively.…”

Parametrization of the Optical Constants of AlAsxSb1-x Alloys in the Range 0.74-6.0 eV

“…The open dots are the data from Ref. [15] while the solid line is the fit of the DFPM to these data. The dashed lines show the contributions of the six individual CPs.…”

“…The source data for ternary alloys are obtained from our previous report [11], while data for AlAs and AlSb were taken from Refs. [14] and [15], respectively. The open dots are the data from Ref.…”