We have investigated by imaging ellipsometry (IE) the crystallization of amorphous silicon (a-Si) at low temperature by Ni-silicide-mediated crystallization on a glass substrate. We observed a significant difference in the ellipsometric image between polycrystalline silicon (poly-Si) and a-Si and confirmed that annealing for longer time leads to increasing area of poly-Si domain. The progress of crystallization is modeled as the growth of a disk in a two-dimensional surface since the crystallized region expanded as a disk shape. The rate of increasing radius of the disk and the average distance between initial nucleus points were obtained by fitting the change of the area of the disk measured by the IE with annealing time.
Pseudodielectric functions ⟨ε⟩ of InxAl1−xAs ternary alloy films were determined from 1.5to6.0eV by spectroscopic ellipsometry. We minimized overlayer effects by performing wet-chemical etching to more accurately determine intrinsic bulk dielectric responses. Energies of the E1, E1+Δ1, E0′, E2, E2+Δ2 and E2′ critical points (CPs) were identified by band structure calculations of the linear augmented Slater-type orbital method. These calculations also showed a crossing of the E0′ and E2 CP structures with increasing In composition and a new saddle point in the AlAs band structure.
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