InAs critical-point energies at 22 K from spectroscopic ellipsometry

Kim, Tae Jung; Yoon, Jaeseung; Hwang, Soon Yong; Jung, Y. W.; Ghong, T. H.; Kim, Young Dong; Kim, HyeJung; Chang, Yia-Chung

doi:10.1063/1.3506497

Cited by 28 publications

(17 citation statements)

References 17 publications

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“…In turn, the photocurrent yield spectra at the (100)InAs/a-Al 2 O 3 interface shown in Figure 27 for three samples with different InAs doping type and surface preparation are quite reproducible and exhibit a clear feature at ℎ] ≈ 4.5 eV, reflecting the 0 / 0 + Δ 0 singularity of the InAs crystal [138]. The latter gives a clear indication that electron IPE from InAs provides the dominant contribution to the detected photocurrent.…”

Section: Interfaces Of Arsenides Of In and Ga With Oxide Insulatorsmentioning

confidence: 85%

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Afanasʼev

2014

Advances in Condensed Matter Physics

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Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole) transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge,Si1-xGex,Ge1-xSnx) andAIIIBVgroup (GaAs,InxGa1-xAs, InAs, GaP, InP, GaSb, InSb) materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV) irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

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Section: Interfaces Of Arsenides Of In and Ga With Oxide Insulatorsmentioning

confidence: 85%

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Afanasʼev

2014

Advances in Condensed Matter Physics

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“…The variation of the dielectric function with photon energy indicates that some interactions between photons and electrons in the films are produced in the energy range of 1–6 eV. The two major spectral features are the E 1 and E 2 critical point (CP) structures at ~3 and ~4.5 eV, respectively [ 11 , 12 ]. To quantitatively determine the energy position of the different interband transitions, we took the zero crossing of the second derivative spectrum of the imaginary part of the pseudodielectric function.The different transition energies obtained are summarized in Table 1 .…”

Section: Resultsmentioning

confidence: 99%

“…The two peaks at 2.9 and 3.1 eV correspond, respectively, to the E 1 and E 1 + Δ 1 , interband transitions in GaAs. However, the two closely positioned peaks at about 4.4 and 4.7 eV are caused by the CP transitions E 0 ’ and E 2 , respectively, in InAs QD layers [ 12 ]. We note that the contribution of the E 1 + Δ 1 CP energy (2.74 eV) [ 12 ] of InAs to the E 1 one (2.91 eV) [ 11 ] of GaAs cannot be excluded due to the small difference between the two energy values.…”

Section: Resultsmentioning

confidence: 99%

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

et al. 2017

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This paper reports on experimental and theoretical investigations of atypical temperature-dependent photoluminescence properties of multi-stacked InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The InAs/InGaAs/GaAs QD heterostructure was grown by solid-source molecular beam epitaxy (SS-MBE) and investigated via photoluminescence (PL), spectroscopic ellipsometry (SE), and picosecond time-resolved photoluminescence. Distinctive double-emission peaks are observed in the PL spectra of the sample. From the excitation power-dependent and temperature-dependent PL measurements, these emission peaks are associated with the ground-state transition from InAs QDs with two different size populations. Luminescence measurements were carried out as function of temperature in the range of 10–300 K by the PL technique. The low temperature PL has shown an abnormal emission which appeared at the low energy side and is attributed to the recombination through the deep levels. The PL peak energy presents an anomalous behavior as a result of the competition process between localized and delocalized carriers. We propose the localized-state ensemble model to explain the usual photoluminescence behaviors. The quantitative study shows that the quantum well continuum states act as a transit channel for the redistribution of thermally activated carriers. We have determined the localization depth and its effect on the application of the investigated heterostructure for photovoltaic cells. The model gives an overview to a possible amelioration of the InAs/InGaAs/GaAs QDs SCs properties based on the theoretical calculations.

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“…13 To obtain the best approximation to the intrinsic dielectric function of InSb, we removed the overlayers mathematically using the four-phase ambient/water/oxide overlayer/InSb substrate model, as described in previous reports. 14 We used dielectric function of water from Ref. 15.…”

Section: Resultsmentioning

confidence: 99%

Temperature dependence of the dielectric functions and the critical points of InSb by spectroscopic ellipsometry from 31 to 675 K

Kim

Hwang

Byun

et al. 2013

Journal of Applied Physics

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InAs critical-point energies at 22 K from spectroscopic ellipsometry

Cited by 28 publications

References 17 publications

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

Temperature dependence of the dielectric functions and the critical points of InSb by spectroscopic ellipsometry from 31 to 675 K

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