The epitaxial stabilization of a single layer or superlattice structures composed of complex oxide materials on polar (111) surfaces is severely burdened by reconstructions at the interface, that commonly arise to neutralize the polarity. We report on the synthesis of high quality LaNiO 3 /mLaAlO 3 pseudo cubic (111) superlattices on polar (111)-oriented LaAlO 3 , the proposed complex oxide candidate for a topological insulating behavior. Comprehensive X-Ray diffraction measurements, RHEED, and element specific resonant X-ray absorption spectroscopy affirm their high structural and chemical quality. The study offers an opportunity to fabricate interesting interface and topology controlled (111) oriented superlattices based on ortho-nickelates.Over the past few years, complex oxide superlattices (SL) with correlated carriers have been widely studied owing to the range of exciting phenomena emerging at the interface which are unattainable in the bulk constituents. 1,2 Recently, active experimental investigations 3-7 on the class of SLs consisting of paramagnetic metal LaNiO 3 (LNO) and LaAlO 3 (LAO) were initiated after the prediction of a possible high T c superconductivity in the LaNiO 3 /LaM O 3 heterostructures (where LaM O 3 is a wide band-gap insulator). 8,9 The experimental realization of LNO/LAO SLs grown on a (001) 10 surface of SrTiO 3 (STO), however, revealed the presence of an unexpected transition to Mott insulating ground state with antiferromagnetic order due to quantum confinement and the effect of d-orbital polarization by the interface. 4,6 Inspired by this approach, several recent theory proposals have been put forward regarding the physics which may emerge in a bilayer of LaNiO 3 sandwiched between LaAlO 3 layers grown along the [111] crystallographic direction. Specifically, the theory predicts the appearance of exotic topological phases (e.g. Dirac half-semimetal phase, quantum anomalous Hall insulator phase or ferromagnetic nematic phase) modulated by the strength of electron-electron correlations. CaTiO 3 on LAO, the epitaxial stabilization is possible only if a "screening" buffer layer is grown first on the polar surface. 18 On the other hand, the polarity matching at the interface can have strong influence on the epitaxial growth, defects formation and overall stoichiometry of the layers as observed by the marked interfacial electronic reconstruction for polar LNO film grown on the top of charge neutral STO vs. polar LAO (001) surface. 19 In this letter, we present the results of artificial layerby-layer growth of an unique class of (111)-oriented 2LNO/mLAO heterostructures (with m = 2, 3, and 4 unit cells) on LAO (111) single crystal (see Fig. 1(a)). The LAO substrate was selected to eliminate the effects of lattice mismatch (i.e. strain) between the layers, which otherwise may hinder the quality of growth. The extensive characterization using reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray diffraction (XRD), and synchrotron based resonant X-ray ...