Reflection high-energy electron diffraction (RHEED) is the analytical tool of choice for characterizing thin films during growth by molecular beam epitaxy, since it is very sensitive to surface structure and morphology. This 2004 book serves as an introduction to RHEED for beginners and describes detailed experimental and theoretical treatments for experts, explaining how to analyze RHEED patterns. For beginners the principles of electron diffraction are explained and many examples of the interpretation of RHEED patterns are described. The second part of the book contains detailed descriptions of RHEED theory. The third part applies RHEED to the determination of surface structures, gives detailed descriptions of the effects of disorder, and critically reviews the mechanisms contributing to RHEED intensity oscillations. This unified and coherent account will appeal to both graduate students and researchers in the study of molecular beam epitaxial growth.

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Methods to determine GaN surface temperature, surface composition, and growth rates using in situ desorption mass spectroscopy (DMS) and reflection high energy electron diffraction (RHEED) are demonstrated for molecular beam epitaxial growth of GaN using NH 3. Using these methods, the GaN surface temperature, To, and GaN growth rates as a function ofT~, Ga flux, and NH 3 flux were obtained. Surface temperatures were determined from DMS and RHEED measurements of the temperature at which Ga condenses on GaN. NH3-1imited and Ga-limited growth regimes are identified and the transition between these regimes is shown to be abrupt. NH 3-limited samples have a weakly reconstructed (2 • 2) RHEED pattern, while Ga-limited samples reveal a transmission pattern. Atomic force microscopy showed that NH3-1imited samples exhibit atomic steps while Ga-limited samples exhibit faceting.