Diffraction from stepped surfaces

Lent, Craig S.; Cohen, P. I.

doi:10.1016/0039-6028(84)90013-x

Cited by 391 publications

(95 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…According to a generally accepted model, 8 this process at the surface competes with the formation of Si monomers at the SiO 2 /Si interface, which may be produced by Si diffusing through the oxide. This leads to an etching process also at the inner interface and formation of etch pits 5,9 with ͑111͒-or ͑113͒-oriented facets that turn out to be the most stable facets under this reaction. A smooth surface bare of oxygen can therefore only be achieved when the reaction of evaporated Si with SiO 2 at the vacuum interface is much faster than the reaction at the inner surface.…”

mentioning

confidence: 99%

Roughness and stability of silicon on insulator surfaces

Czubanowski

Tegenkamp

Ernst

et al. 2004

Applied Physics Letters

View full text Add to dashboard Cite

The feasibility of low temperature processes (below 800 °C) to obtain in situ atomically clean and smooth surfaces on (100) oriented silicon on insulator material (SOI) with negligible variation of the top Si film thickness was tested. These steps were characterized using low-energy electron diffraction and atomic force microscopy supplemented by conductivity measurements. The most promising method for obtaining atomically smooth and continuous SOI films is the evaporation of Si at 750 °C at a flux of 0.15 ML/min. For lower rates [113]-oriented pits are formed within the SOI layer. It turned out that mobile and volatile oxide formation at the Si/SiO2 interface in these materials can occur already at temperatures below 1000° C, leading to the destruction of the buried oxide layer.

show abstract

mentioning

confidence: 99%

Roughness and stability of silicon on insulator surfaces

Czubanowski

Tegenkamp

Ernst

et al. 2004

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…3 for two different scattering energies E 1 and E 2 , the intensity profile of the ͑0,0͒ beam obtained after diffraction from a rough crystalline surface consists of a sharp central spike ͑dominated by the instrument response function of the SPA-LEED optics͒ and shoulders ͑determined by the Fourier transform of the generally unknown step distribution function on the surface͒. 18,19 Their relative intensities depend on the phase relationship for scattering between adjacent levels, i.e., the energy. Changing from an in-phase to an out-of phase energy, a decrease in the sharp central spike region and an intensity increase in the shoulder structure is observed ͑and vice versa͒.…”

mentioning

confidence: 99%

Morphological and electronic properties of ultrathin crystalline silica epilayers on a Mo(112) substrate

et al. 2002

View full text Add to dashboard Cite

Ultrathin crystalline silica layers grown on a Mo͑112͒ substrate have been shown to be a useful silica model oxide support in surface science model catalyst studies. As the oxide support material plays an important role in the catalytic process, a multitechnique surface science study is presented to characterize the morphological and electronic properties of the heteroepitaxial system SiO 2 /Mo(112). The long-range order of the silica epilayer which grows commensurate with a c(2ϫ2) surface unit mesh on the Mo͑112͒ substrate is studied by low-energy electron diffraction ͑LEED͒. The defect structure of the silica epilayer is characterized in a spot profile analysis ͑SPA͒-LEED study. Antiphase domain boundaries split the silica epilayer into an array of silica crystal grains whose average size and shape is determined. Aiming to prepare flat silica surfaces, the change in the surface roughness with progress in the film preparation is monitored in a combined SPA-LEED and scanning tunneling microscopy ͑STM͒ study and seen to influence also the Si-O stretching frequency in the infrared-reflection-absorption spectroscopy spectra. In STM images of the final silica film an average surface roughness of about 1 Å is detected. It is possible to visualize the silica film unit cell periodicity. A combined anger electron spectroscopy and ultraviolet photoelectron spectroscopy valence band study confirms the silica film stoichiometry and the growth of a 4:2 coordinated silica polymorph on the Mo͑112͒ surface. These various surface science studies allow us to propose models for the growth and structure of the silica epilayer on the Mo͑112͒ surface.

show abstract

“…Such changes include broadening without changing shape, splitting into multiple spots, or change of shape at different incident beam energies (from a sharp and strong spot to a weaker spot with shoulder or ring around, for example). The effects of different types of non-flat surfaces have on the spot profile had been studied thoroughly by Lent and Cohen [13], Pukite, Lent and Cohen [14] and Zhm, Luo and Henzler [15]. Assuming a two layer system, which is appropriate for Pb/Si(lll) since Pb islands have steep edges and flat tops and only the top of islands and the area between islands are exposed to incident electrons (see lower right of figure l.l), Ref [13,14,151 all had shown that, by the Fourier transform of the pair correlation function, the profile of the specular spot is given by I(As) = [l -TI(@, As)]2nd(As//) + I1(6', As,)C(As//),…”

Section: Literature Reviewmentioning

confidence: 99%

“…Therefore, by measuring the position of the satellite spot around (00) spot at an out-of-phase condition, one can determine the average island separation S by (1. 13) where Kl is the position of the satellite spot, a0 the substrate lattice constant, Klo = 27r/ao is the distance between (00) and (IO) spot. The bottom of figure 1.6 shows how to measure such a quantity.…”

Section: Lateral Informationmentioning

confidence: 99%

SPA-LEED Study of the Morphology and Nucleation of a Novel Growth Mode and the ''devil's staircase'' on Pb/Si(111)

Yeh¹

2003

View full text Add to dashboard Cite

Diffraction from stepped surfaces

Cited by 391 publications

References 27 publications

Roughness and stability of silicon on insulator surfaces

Roughness and stability of silicon on insulator surfaces

Morphological and electronic properties of ultrathin crystalline silica epilayers on a Mo(112) substrate

SPA-LEED Study of the Morphology and Nucleation of a Novel Growth Mode and the ''devil's staircase'' on Pb/Si(111)

Contact Info

Product

Resources

About