Reduction of Line Width and Edge Roughness by Resist Reflow Process for Extreme Ultra-Violet Lithography

Cho, In Wook; Kim, Hyun-Su; Hong, Jung Hee; Oh, Hye−Keun; Kim, Seung Wook

doi:10.3938/jkps.56.1767

Cited by 5 publications

(5 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…While CARs rely on external photoacid generators (PAGs) [ 16 ] and radiation or light to induce polarity changes between exposed and unexposed regions, n-CARs offer a blend of their resist backbone with photosensitive functionality [ 15 , 17 ] and undergo polarity shifts without any catalytic chemical amplification. Consequently, n-CAR formulations are notably less complex and solve the problem of acid diffusion, leading to enhanced LWR and LER [ 18 ]. These materials can exist in the form of either organic or molecular resists, each exhibiting distinct mechanisms of decomposition.…”

Section: Working Mechanism and Synthesis Methodsmentioning

confidence: 99%

Recent Advances in Positive Photoresists: Mechanisms and Fabrication

Hassaan,

Saleem,

Singh

et al. 2024

Materials

View full text Add to dashboard Cite

Photoresists are fundamental materials in photolithography and are crucial for precise patterning in microelectronic devices, MEMS, and nanostructures. This paper provides an in-depth review of recent advancements in positive photoresist research and development, focusing on discussion regarding the underlying mechanisms governing their behavior, exploring innovative fabrication techniques, and highlighting the advantages of the photoresist classes discussed. The paper begins by discussing the need for the development of new photoresist technologies, highlighting issues associated with adopting extreme ultraviolet photolithography and addressing these challenges through the development of advanced positive-tone resist materials with improved patterning features, resolution, and sensitivity. Subsequently, it discusses the working mechanisms and synthesis methods of different types and subtypes of photoresists, starting from non-chemically amplified, organic, and inorganic–organic hybrid photoresists and progressing to dry film resists, with an emphasis on the upsides of each. The paper concludes by discussing how future research in the field of lithography—prioritizing concerns related to environmental impacts, improved photoresist material and properties, and utilization of advanced quantum technology—can assist with revolutionizing lithography techniques.

show abstract

Section: Working Mechanism and Synthesis Methodsmentioning

confidence: 99%

Recent Advances in Positive Photoresists: Mechanisms and Fabrication

Hassaan,

Saleem,

Singh

et al. 2024

Materials

View full text Add to dashboard Cite

show abstract

“…The fluctuation of the global exposure r 2 e G , which affects the LER, can be derived from Eqs. (10) and (11) through the same procedure as in Eq. (3).…”

Section: A Modeling Of Global Exposurementioning

confidence: 99%

“…[6][7][8][9] For minimizing the LER, many of the previous efforts were based on an empirical or trial-and-error approach via experiment or simulation. [10][11][12] However, such a method can be very time-consuming and costly since repetitive simulations or experiments may be required. In order to avoid the simulation and experiment, one may take an analytic approach to estimating and minimizing the LER.…”

Section: Introductionmentioning

confidence: 99%

Analytic estimation of line edge roughness for large-scale uniform patterns in electron-beam lithography

Guo

Lee

Choi

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

As the feature size continues to be reduced well below nanoscale, the line edge roughness (LER) will eventually become a resolution-limiting factor in the electron-beam (e-beam) lithography since the LER does not scale with the feature size. Therefore, to achieve the highest resolution possible by the e-beam lithography, the LER needs to be minimized. A simulation-based or experimental approach for estimating and minimizing the LER normally requires a great deal of effort to analyze the relationship between the LER and e-beam parameters and thus is time-consuming. Previously, an analytic method for estimating and minimizing the LER was developed for the case of a single line. In this paper, an extension of the estimation method for large-scale uniform patterns is described. In a large pattern, the exposure distribution over a feature varies with the location within the pattern, and the location dependency is due to the global exposure. The analytic expression of LER derived for a single line is adjusted depending on the location. The amount of adjustment for each of the critical locations is determined by the stochastic information on the global exposure at that location. The LER at a location is obtained through an interpolation using the LERs at the critical locations. The LER evaluated by the analytic expression of LER has been compared with that obtained through simulation. V

show abstract

“…Many of the previous efforts made to reduce the LER are based on an empirical or trial-and-error approach via experiment or simulation. [10][11][12] However, such a method can be very time-consuming and expensive since repetitive simulations or experiments may be required. In order to avoid the simulation and experiment, one may take an analytic approach for estimating and minimizing the LER.…”

Section: Introductionmentioning

confidence: 99%

Analytic estimation and minimization of line edge roughness in electron-beam lithography

Guo

Lee

Choi

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

Simulation of amine concentration dependence on line edge roughness after development in electron beam lithography J. Appl. Phys. Electron-beam patterning with sub-2 nm line edge roughnessAs the feature size is reduced well below 100 nm, the line edge roughness (LER) will eventually become a resolution-limiting factor in the electron-beam (e-beam) lithography since the LER does not scale with the feature size. Therefore, it is essential to minimize the LER in order to achieve the highest resolution possible by the e-beam lithographic process. A simulation or experiment based method for minimizing the LER can be very time-consuming and expensive since repetitive simulations or experiments may be required. In this study, a new analytic model and a method for estimating the LER are developed based on the model, and an analytic procedure for minimizing the LER is also derived based on the new analytic model. In this new approach, the LER is derived from the distribution of the stochastic developing rate in the resist, which is assumed to be known. The results obtained by the analytic estimation method and the minimization procedure are shown to be close to those by the simulation method. The current work includes generalization of the results of this study with more practical models.

show abstract

Reduction of Line Width and Edge Roughness by Resist Reflow Process for Extreme Ultra-Violet Lithography

Cited by 5 publications

References 0 publications

Recent Advances in Positive Photoresists: Mechanisms and Fabrication

Recent Advances in Positive Photoresists: Mechanisms and Fabrication

Analytic estimation of line edge roughness for large-scale uniform patterns in electron-beam lithography

Analytic estimation and minimization of line edge roughness in electron-beam lithography

Contact Info

Product

Resources

About