Reduction of defects propagating into 3C-SiC homoepilayers by reactive ion etching of 3C-SiC heteroepilayer substrates

Yun, Jungheum; Takahashi, Tetsuo; Kuroda, Shunsuke; Ishida, Yuuki; Okumura, Hajime

doi:10.1016/j.jcrysgro.2007.06.036

Cited by 10 publications

(9 citation statements)

References 8 publications

(17 reference statements)

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“…Epitaxial <001> β‐SiC on (001) Si substrate yielded lamellar crystals in previous investigations, whereas β‐SiC films exhibited a columnar structure in our study. The deposition rate of epitaxial growth of <001> β‐SiC was 0.1‐4.3 μm/h in conventional CVD .…”

Section: Resultssupporting

confidence: 54%

“…In conventional CVD, lamellar crystals form at a lower growth rate because of homogeneous nucleation . The TBs propagate in the horizontal direction (along the substrate surface) until they meet anti‐TB pairs, and then the TB couples vanish, as shown in Figure A. In the case of LCVD, columnar crystals are formed at a higher growth rate due to heterogeneous nucleation, caused by the high power of the laser.…”

Section: Resultsmentioning

confidence: 99%

“…When β‐SiC<001> films are grown epitaxially on Si(001) substrates, the resulting microstructure is lamellar . The explanation for this microstructure is that the {111} facets of β‐SiC nuclei are aligned with the Si{111} planes and inclined at 54.7° to the <001> growth direction.…”

Section: Introductionmentioning

confidence: 99%

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Structural study of β‐SiC(001) films on Si(001) by laser chemical vapor deposition

Zhu

Chen

et al. 2017

J Am Ceram Soc

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b-SiC thin films have been epitaxially grown on Si(001) substrates by laser chemical vapor deposition. The epitaxial relationship was b-SiC(001){111}//Si(001) {111}, and multiple twins {111} planes were identified. The maximum deposition rate was 23.6 lm/h, which is 5-200 times higher than that of conventional chemical vapor deposition methods. The density of twins increased with increasing b-SiC thickness. The cross section of the films exhibited a columnar structure, containing twins at {111} planes that were tilted 15.8°to the surface of substrate. The growth mechanism of the films was discussed. K E Y W O R D S chemical vapor deposition, silicon carbide

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Section: Resultssupporting

confidence: 54%

Section: Resultsmentioning

confidence: 99%

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Structural study of β‐SiC(001) films on Si(001) by laser chemical vapor deposition

Zhu

Chen

et al. 2017

J Am Ceram Soc

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“…The lamellar crystal growth could result in self-vanishment of TB defects. 36 The mechanism of TB defect self-vanishment had been discussed in our previous study. 37,38 In present study, the TB 1 growth on (1-11) plane of epi-3C-SiC (110) propagated along the substrate surface until meet anti-TB 1 on (-111) plane, and then TB 1 couples vanish.…”

Section: Resultsmentioning

confidence: 93%

Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD

Sun

Yang

et al. 2019

J Am Ceram Soc

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Previously, we found 3C-SiC films favor to grow in <111> orientation on Si (110) (https://doi.org/10.1111/jace.15260). However, epitaxial growth of thick <110>-3C-SiC is still a big challenge. In this study, thick 3C-SiC (110) epitaxial films were prepared on Si (110) substrate by laser chemical vapor deposition (LCVD) using hexamethyldisilane (HMDS) in H 2 atmosphere. The investigation of growth mechanism showed that the laser of LCVD played an important role during the depositions. Observation by high-resolution transmission electron microscopy (HRTEM) revealed that the interface of 3C-SiC (110)/Si (110) exhibited rough texture at atomic level. The atomic roughness on Si (110) surface could be a key factor for 3C-SiC (110) nucleation. The growth of thick 3C-SiC (110) epitaxial films could be very promising for new development in power electronics applications.

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“…Some authors have proposed different extrinsic routes for effectively reducing the defect densities. In most cases, they require either the suppression of the silicon substrate or the use of specifically patterned Si substrates (undulant substrates) or both (switchback epitaxy) [56][57][58]. They appear very efficient in solving, to a large extent, the presence of extended defects in 3C-SiC(100) oriented epilayers.…”

Section: Role Of Defectsmentioning

confidence: 99%

3C-SiC — From Electronic to MEMS Devices

Michaud¹,

Portail²,

Alquier³

2015

Advanced Silicon Carbide Devices and Processing

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Since decades, silicon carbide (SiC) has been avowed as an interesting material for highpower and high-temperature applications because of its significant properties including its wide bandgap energy and high temperature stability. SiC is also professed as an ideal candidate for microsystem applications due to its excellent mechanical properties and chemical inertia, making it suitable for harsh environments. Among the 250 different SiC polytypes, only 4H, 6H and 3C-SiC are commercially available. The cubic structure, 3C-SiC, is the only one that can be grown on cheap silicon substrates. Hence, 3C-SiC is more interesting than any other polytype for reducing fabrication costs and increasing wafer diameter. This huge property has been evidenced for more than 30 years using chemical vapor deposition. Despite this key achievement and the growing interest for silicon carbide, no 3C-SiC-based devices can be found on the market whereas 4H-SiCbased devices are more and more largely commercialized. Even so, important headways have been reached for electrical and microelectromechanical systems (MEMS) applications. Therefore, the purpose of this chapter is to address concerns related to electronic applications and MEMS fabrication of 3C-SiC-based devices, trying to give a broad overview on specific issues and challenging solutions.

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Reduction of defects propagating into 3C-SiC homoepilayers by reactive ion etching of 3C-SiC heteroepilayer substrates

Cited by 10 publications

References 8 publications

Structural study of β‐SiC(001) films on Si(001) by laser chemical vapor deposition

Structural study of β‐SiC(001) films on Si(001) by laser chemical vapor deposition

Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD

3C-SiC — From Electronic to MEMS Devices

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