2021 IEEE International Ultrasonics Symposium (IUS) 2021
DOI: 10.1109/ius52206.2021.9593752
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Reduced TCF, High Frequency, Piezoelectric Contour-Mode Resonators with Silicon-on-Nothing

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Cited by 6 publications
(1 citation statement)
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“…This method avoids the lattice mismatch [110] and strain problems. An n-type degenerate doped resonator aligned with the <100> crystal orientation of the Si substrate was also proposed and achieved a TCF of −7.4 ppm/ • C [111]. A piezoelectric AlN resonator combining a composite structure of heavily doped and oxide layers has been reported in recent years [112].…”
Section: Passive Compensationmentioning
confidence: 99%
“…This method avoids the lattice mismatch [110] and strain problems. An n-type degenerate doped resonator aligned with the <100> crystal orientation of the Si substrate was also proposed and achieved a TCF of −7.4 ppm/ • C [111]. A piezoelectric AlN resonator combining a composite structure of heavily doped and oxide layers has been reported in recent years [112].…”
Section: Passive Compensationmentioning
confidence: 99%