Recent progress of studies on intense particle beam at Nagaoka—ETIGO Project

Yatsui, Kiyoshi; Shimotori, Y.; Ikeda, Mitsugu; Takahashi, Akira; Tanabe, T; Aga, Keigo; Kanai, Akifumi; Araki, Younosuke; Masugata, Katsumi; Kawata, Shigeo; Murayama, Minoru

doi:10.1017/s0263034600002913

Cited by 3 publications

References 11 publications

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AC Thin-Film ZnS:Mn Electroluminescent Device Prepared by Intense Pulsed Ion Beam Evaporation

Shimotori

Yokoyama

Masugata

et al. 1989

Springer Proceedings in Physics

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Electroluminescent ZnS:Mn thin films have been deposited by Zn, Sand Mn ions from high-density, high-temperature plasma produced by an intense (> GW/cm 2 ) , pulsed (~ tens of ns), ion beam onto the ZnS:Mn target.X-ray diffraction analysis shows the ZnS films have a polycrystalline, hexagonal structure. Deposition rate is typically ~ 0.3 ~m per beam shot.Using a simple model, the instantaneous deposi tion rate is estimated to be ~ 2 cm/s, which exceeds five orders of magnitude higher than those of conventional deposition method.The electroluminescent device exhibits the maximum brightness of 195 cd/m 2 under a 10 kHz sinusoidal excitation at 102 V (rms).

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AC Thin-Film ZnS:Mn Electroluminescent Device Prepared by Intense Pulsed Ion Beam Evaporation

Shimotori

Yokoyama

Masugata

et al. 1989

Springer Proceedings in Physics

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Two-dimensional focusing of self-magnetically insulated “Plasma Focus Diode”

et al. 1989

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A new and simple type of self-magnetically insulated, vacuum ion diode named “Plasma Focus Diode” has been successfully developed with a large solid angle of irradiation and low divergence angle. The diode has a pair of coaxial cylindrical electrodes similar to a Mather-type plasma focus device. Ion-current density of 1·9 kA/cm2 has been obtained on the anode surface under the experimental conditions of diode voltage ∼1·4 MV, diode current ∼180 kA, and pulse width ∼75 ns. The generated ion beam has been two-dimensionally focused (line focusing) with a focusing radius of ∼0·18 mm, giving a maximum ion current density and beam power density at the axis of ∼0·14 MA/cm2 and ∼0·18 TW/cm2, respectively. The motion of electrons in the gap has been numerically simulated by use of a newly developed particle-in-cell computer simulation code, and good agreement has been obtained between the simulation and the experiment.

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Quick Deposition of ZuS:Mn Electroluminescent Thin Films by Intense, Pulsed, Ion Beam Evaporation

Shimotori

Yokoyama

Harada

et al. 1989

Jpn. J. Appl. Phys.

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Electroluminescent ZnS:Mn thin films have been guickly deposited by a high-density, high-temperature plasma produced by the irradiation of an intense (>GW/cm2), pulsed (∼tens of ns) ion beam onto a ZnS:Mn target. The films prepared on a glass substrate have a polycrystalline hexagonal structure. The temperature of the target plasma was estimated to be ∼2.7 eV, where the plasma was highly ionized. The instantaneous deposition rate was estimated to be ∼4 cm/s, which is at least five orders of magnitude higher than that of any other conventional evaporation techique. We have prepared a ZnS:Mn electroluminescent device with a luminescent layer having a thickness of ∼200 nm. The device has a threshold voltage of ∼80 V0p (zero to peak value). The maximum luminance of 195 cd/m2 has been obtained under 10 kHz sinusoidal excitation at 144 V0p.

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Recent progress of studies on intense particle beam at Nagaoka—ETIGO Project

Cited by 3 publications

References 11 publications

AC Thin-Film ZnS:Mn Electroluminescent Device Prepared by Intense Pulsed Ion Beam Evaporation

AC Thin-Film ZnS:Mn Electroluminescent Device Prepared by Intense Pulsed Ion Beam Evaporation

Two-dimensional focusing of self-magnetically insulated “Plasma Focus Diode”

Quick Deposition of ZuS:Mn Electroluminescent Thin Films by Intense, Pulsed, Ion Beam Evaporation

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