Rear junction laser doped solar cells on CZ n-type silicon

Mai, Linh; Hameiri, Ziv; Tjahjono, Budi; Wenham, Stuart; Sugianto, Adeline; Edwards, Matthew

doi:10.1109/pvsc.2009.5411499

Cited by 20 publications

(9 citation statements)

References 5 publications

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“…For dry laser‐doping, the concentration of the phosphorus dopant source and spin‐coating conditions as well as the laser parameters can affect the properties of the laser‐doped regions and consequently also the subsequent LIP . Recent reports have demonstrated that both dry and wet approaches can result in heavily‐doped grooves, which can be metallised using LIP nickel/copper/silver or LIP nickel/silver . Because the patterning process also forms the selective‐emitter, metallisation of laser‐doped front surface grids is a self‐aligning process, thus making the technology attractive for manufacturing.…”

Section: Front‐grid Metallisationmentioning

confidence: 99%

“…For dry laser-doping, the concentration of the phosphorus dopant source and spin-coating Silicon solar cell metallisation A. Lennon, Y. Yao and S. Wenham conditions as well as the laser parameters can affect the properties of the laser-doped regions and consequently also the subsequent LIP [64]. Recent reports have demonstrated that both dry and wet approaches can result in heavilydoped grooves, which can be metallised using LIP nickel/ copper/silver or LIP nickel/silver [27,56,57,59,61,62,65].…”

Section: Laser Dopingmentioning

confidence: 99%

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Evolution of metal plating for silicon solar cell metallisation

Lennon

Wenham

2012

Progress in Photovoltaics

105

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Increasing silver prices and reducing silicon wafer thicknesses provide incentives for silicon solar cell manufacturing to develop new metallisation strategies that do not rely on screen printing and preferably reduce silver usage. Recently, metal plating has re‐emerged as a metallisation process that may address these future requirements. This paper reports on the evolution of metal plating techniques, from their use in early silicon solar cells, to current light‐induced plating processes. Unlike screen‐printed metallisation, metal plating typically requires an initial patterning step to create openings in a masking layer for the subsequent self‐aligned metallisation. Consequently, relevant recently‐developed dielectric patterning methods are also reviewed because, in many cases, the plating process must be adapted to the properties of the patterning method used. The potential of new light‐induced plating processes to form cost‐effective copper metallisation is supported by the recent activity in the development of metal plating tools for commercial silicon solar cell manufacture. Copyright © 2012 John Wiley & Sons, Ltd.

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Section: Front‐grid Metallisationmentioning

confidence: 99%

Section: Laser Dopingmentioning

confidence: 99%

Evolution of metal plating for silicon solar cell metallisation

Lennon

Wenham

2012

Progress in Photovoltaics

105

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“…In this way, a selective emitter and self‐aligned metallisation pattern are formed simultaneously. High efficiency solar cells on both n and p‐type substrates were achieved using this technique 29, 35, 36.…”

Section: Introductionmentioning

confidence: 99%

Laser induced defects in laser doped solar cells

Hameiri

Puzzer

Mai

et al. 2010

Progress in Photovoltaics

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Laser doping offers a promising method to define selective emitters for solar cells. Its main advantage is the localised nature of the laser beam, which allows melting of the surface area without heating the bulk. The ability to perform this process over a dielectric film offers further benefits, such as the possibility of creating self‐aligned metallisation patterns simultaneously with the selective emitter formation. However, laser induced defects, contaminations and discontinuities in the selective emitter can reduce solar cell performance. In this work the influence of different dielectric films on defect formation is investigated. It was found that a thin oxide beneath the SiNx improves the implied open circuit voltage of the solar cells for a wide range of laser output powers. Fewer defects were observed when using this SiO2/SiNx stack compared to the standard single SiNx anti‐reflection coating layer. It was also found that the recrystallised silicon layer grows epitaxially according the substrate orientation. No dislocation or stacking faults were observed in deeper areas using transmission electron microscopy, although some defects were observed near the surface. Electron beam induced current images revealed discontinuities in junctions formed with high laser powers. We conclude that micro‐cracks create these discontinuities, which can potentially induce shunts. Finally, laser doped solar cells with a standard SiNx and with a double SiO2/SiNx stack layer as anti‐reflection coating were compared. An efficiency of 18.4% on a large area commercial grade p‐type CZ substrate was achieved. Copyright © 2010 John Wiley & Sons, Ltd.

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“…3. This decrease of the electric eld over the depletion region let the photogenerated holes able to pass to the front contact and the electrons to the back [10,11]. …”

Section: Resultsmentioning

confidence: 99%

Study of p-Layer Doping Density and Surface Band Bending on the Indium Tin Oxide/Hydrogenated Amorphous Silicon Heterojunction Solar Cells

Rached

Yssad

2015

Acta Phys. Pol. A

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A solar cell (indium tin oxide (ITO)/p-doped amorphous silicon (p-a-Si:H)/intrinsic polymorphous silicon (i-pm-Si:H)/n-doped crystalline silicon (n-c-Si)) simulation, focused on p-layer doping density N A and surface band bending E sbb at the interface ITO/p-layer has been performed. Despite the deterioration of p-layer material quality with doping density, the reduced bulk recombination was found to compensate for the increased loss in the p-layer. An increase of p-layer doping density N A and contact barrier height ϕ b0 (variation of the surface band bending E sbb ) leads to an increase of the eciency of heterojunction with intrinsic thin layer solar cells.

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Rear junction laser doped solar cells on CZ n-type silicon

Cited by 20 publications

References 5 publications

Evolution of metal plating for silicon solar cell metallisation

Evolution of metal plating for silicon solar cell metallisation

Laser induced defects in laser doped solar cells

Study of p-Layer Doping Density and Surface Band Bending on the Indium Tin Oxide/Hydrogenated Amorphous Silicon Heterojunction Solar Cells

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