A solar cell (indium tin oxide (ITO)/p-doped amorphous silicon (p-a-Si:H)/intrinsic polymorphous silicon (i-pm-Si:H)/n-doped crystalline silicon (n-c-Si)) simulation, focused on p-layer doping density N A and surface band bending E sbb at the interface ITO/p-layer has been performed. Despite the deterioration of p-layer material quality with doping density, the reduced bulk recombination was found to compensate for the increased loss in the p-layer. An increase of p-layer doping density N A and contact barrier height ϕ b0 (variation of the surface band bending E sbb ) leads to an increase of the eciency of heterojunction with intrinsic thin layer solar cells.
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