Real-time x-ray studies of Mo-seeded Si nanodot formation during ion bombardment

Özaydin, Gözde; Özcan, Ahmet; Wang, Yiyi; Ludwig, Karl; Zhou, Hua; Headrick, Randall L.; Siddons, D. P.

doi:10.1063/1.2099521

Cited by 130 publications

(116 citation statements)

References 17 publications

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“…[5][6][7][8][9][10][11][12][13][14] In particular, metallic surfactants like Fe and Mo induce pronounced dot and ripple patterns on Si substrates even during normal and near normal ion incidence sputter erosion. 2,8,9,[11][12][13] In the absence of co-deposition of foreign atoms and for normal and near normal ion incidence, even for incidence angles up to 50…”

Section: Introductionmentioning

confidence: 99%

Sharp transition from ripple patterns to a flat surface for ion beam erosion of Si with simultaneous co-deposition of iron

2012

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We investigate pattern formation on Si by sputter erosion under simultaneous co-deposition of Fe atoms, both at off-normal incidence, as function of the Fe surface coverage. The patterns obtained for 5 keV Xe ion irradiation at 30° incidence angle are analyzed with atomic force microscopy. Rutherford backscattering spectroscopy of the local steady state Fe content of the Fe-Si surface layer allows a quantitative correlation between pattern type and Fe coverage. With increasing Fe coverage the patterns change, starting from a flat surface at low coverage (< 2×1015 Fe/cm2) over dot patterns (2-8×1015 Fe/cm2), ripples patterns (8-17×1015 Fe/cm2), pill bug structures (1.8×1016 Fe/cm2) and a rather flat surface with randomly distributed weak pits at high Fe coverage (>1.8×1016 Fe/cm2). Our results confirm the observations by Macko for 2 keV Kr ion irradiation of Si with Fe co-deposition. In particular, we also find a sharp transition from pronounced ripple patterns with large amplitude (rms roughness ∼ 18 nm) to a rather flat surface (rms roughness ∼ 0.5 nm). Within this transition regime, we also observe the formation of pill bug structures, i.e. individual small hillocks with a rippled structure on an otherwise rather flat surface. The transition occurs within a very narrow regime of the steady state Fe surface coverage between 1.7 and 1.8×1016 Fe/cm2, where the composition of the mixed Fe-Si surface layer of about 10 nm thickness reaches the stoichiometry of FeSi2. Phase separation towards amorphous iron silicide is assumed as the major contribution for the pattern formation at lower Fe coverage and the sharp transition from ripple patterns to a flat surface

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Section: Introductionmentioning

confidence: 99%

Sharp transition from ripple patterns to a flat surface for ion beam erosion of Si with simultaneous co-deposition of iron

2012

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“…To enable such synchrotron based experiments, a dedicated ALD setup is required that is preferably mobile so that it can be used at different beamline end stations (enabling different x-ray based characterization techniques), preferably at different synchrotron user facilities. In recent years, "in situ" setups have been developed at the National Synchrotron Light Source (NSLS I) at Brookhaven National Lab (by temporarily transforming a multi-purpose UHV chamber at beamline X21 into an ALD reactor), 10,24 at the Pohang Light Source (PLS), 14 at the Advanced Photon Source (APS) at Argonne National Laboratory, 21 at Stanford Synchrotron Radiation Lightsource (SSRL), 20 and at SOLEIL, 19,22 while "in vacuo" setups have been developed at BESSY II 25,26 and at SSRL, 27,28 mainly targeting XPS.…”

Section: Introductionmentioning

confidence: 99%

Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition

Dendooven

Solano

Minjauw

et al. 2016

Review of Scientific Instruments

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We report the design of a mobile setup for synchrotron based in situ studies during atomic layer processing. The system was designed to facilitate in situ grazing incidence small angle x-ray scattering (GISAXS), x-ray fluorescence (XRF), and x-ray absorption spectroscopy measurements at synchrotron facilities. The setup consists of a compact high vacuum pump-type reactor for atomic layer deposition (ALD). The presence of a remote radio frequency plasma source enables in situ experiments during both thermal as well as plasma-enhanced ALD. The system has been successfully installed at different beam line end stations at the European Synchrotron Radiation Facility and SOLEIL synchrotrons. Examples are discussed of in situ GISAXS and XRF measurements during thermal and plasma-enhanced ALD growth of ruthenium from RuO4 (ToRuS™, Air Liquide) and H2 or H2 plasma, providing insights in the nucleation behavior of these processes.

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“…Hence, the systematic observation for Si targets by Ozaydin et al [9] on the lack of pattern formation at normal incidence came as a surprise. These authors noted that, under these conditions and for 1 keV Ar + ions, patterns were obtained only when intentional seeding with Mo was performed.…”

Section: Morphological Instability Under Ibsmentioning

confidence: 99%

Energy dependence of the ripple wavelength for ion-beam sputtering of silicon: Experiments and theory

Castro¹,

Gago²,

Vázquez³

et al. 2013

AIP Conference Proceedings

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Abstract. In spite of the efforts devoted for the last 20 years to elucidating ion-beam sputtering (IBS) as an instance of surface self-organization, the classic view on the main mechanism inducing the morphological instability has been recently challenged. We report on the verification of a recent theoretical description of this nanopattern formation process for semiconducting targets, as driven by stress-induced, viscous flow of a thin amorphous layer that develops at the surface [M. Cuerno and R. Cuerno, Appl. Surf. Sci. 258, 4171 (2012)]. Through experiments on silicon as a representative case, we study the dependence of the ripple wavelength with the average ion energy, finding a linear dependence in the 0.3-1 keV range. This is explained within the viscous flow framework, taking into account the energy dependence of the number of displaced atoms generated by collision cascades in the amorphous layer, as predicted by previous models of ion-generated stress. For our analysis, we provide a systematic criterion to guarantee actual linear dynamics behavior, not affected by the onset of nonlinear effects that may influence the value of the ripple wavelength.

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Real-time x-ray studies of Mo-seeded Si nanodot formation during ion bombardment

Cited by 130 publications

References 17 publications

Sharp transition from ripple patterns to a flat surface for ion beam erosion of Si with simultaneous co-deposition of iron

Sharp transition from ripple patterns to a flat surface for ion beam erosion of Si with simultaneous co-deposition of iron

Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition

Energy dependence of the ripple wavelength for ion-beam sputtering of silicon: Experiments and theory

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