2011
DOI: 10.1051/epjap/2011110199
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Reactive ionized physical vapor deposition of thin films

Abstract: Abstract.In this article, the experimental results obtained in our laboratory for the last ten years and related to the reactive Ionized Physical Vapor Deposition (IPVD) processes are reviewed. Titanium oxide and titanium nitride thin films were chosen as case studies. The titanium-based thin films were synthesized from a pure titanium target sputtered in a mixture of argon and reactive gas (oxygen or nitrogen). Two IPVD processes were investigated namely i) reactive magnetron sputtering amplified by a superim… Show more

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Cited by 11 publications
(3 citation statements)
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“…In a reactive state, this is supplemented by the gas recycling, however, in the described case of target cleaning only reactive particles sputtered from the target were available. Therefore, such sputtering mechanism can be neglected as shown in earlier experiments [37]. As the reactive compound is harder to sputter, creating less metallic ions than in the case of a clean target, the border between the Ar recycling and metallic recycling could be shifted for higher currents.…”
Section: Discussionmentioning
confidence: 99%
“…In a reactive state, this is supplemented by the gas recycling, however, in the described case of target cleaning only reactive particles sputtered from the target were available. Therefore, such sputtering mechanism can be neglected as shown in earlier experiments [37]. As the reactive compound is harder to sputter, creating less metallic ions than in the case of a clean target, the border between the Ar recycling and metallic recycling could be shifted for higher currents.…”
Section: Discussionmentioning
confidence: 99%
“…The high electron density in the HiPIMS discharge is expected to enhance the dissociation of the molecular gas, which is sometimes considered beneficial for the oxided or nitride deposition. 216 The presence of reactive gas can also lead to the formation of compound material on the target surface, often referred to as target coverage or target poisoning. 217 Due to this target coverage the reactive sputtering process is inherently unstable, and is commonly represented in a familiar hysteresis curve that shows, e.g., the deposition rate or the target voltage versus the flow rate of the reactant molecular gas.…”
Section: E Reactive Sputteringmentioning
confidence: 99%
“…1,2 Pulsing the target to a high power density with short voltage pulses while maintaining a low duty cycle results in a high electron density, 3 which provides a high ionization fraction of the sputtered atoms. 7,8 In addition, the high electron density results in increased dissociation of the molecular gas and thus the reactivity of the sputtered species is increased, 9,10 which is beneficial during reactive sputtering, where a reactive gas such as O 2 or N 2 is added to the discharge. 7,8 In addition, the high electron density results in increased dissociation of the molecular gas and thus the reactivity of the sputtered species is increased, 9,10 which is beneficial during reactive sputtering, where a reactive gas such as O 2 or N 2 is added to the discharge.…”
Section: Introductionmentioning
confidence: 99%