Rare earth-based high-k materials for non-volatile memory applications

Alessandri, Mauro; Vitto, Annalisa Del; Piagge, R.; Sebastiani, Alessandro; Scozzari, C.; Wiemer, C.; Lamagna, L.; Perego, Michele; Ghidini, G.; Fanciulli, M.

doi:10.1016/j.mee.2009.06.022

Cited by 10 publications

(13 citation statements)

References 6 publications

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“…3b, reveal a thickness shrinking from 16.5 nm down to 14 nm (∼15%) and a densification, namely the electron density is seen to change from 0.90 to 1.17 e-/Ǻ 3 , as clearly evidenced by the shift in the position of the critical angle to higher angles (see arrow in Fig. 27 Recalling the above mentioned crystalline phase transformation in HfO 2 , and considering that PDA also promotes Al 2 O 3 crystallization, HfO 2 /Al 2 O 3 interface rearranges upon PDA and, not surprisingly, may favoring some interdiffusion to take place. This behavior indirectly indicates that PDA promotes Al 2 O 3 layer crystallization in the cubic γ-phase.…”

Section: Resultsmentioning

confidence: 92%

“…A retention degradation for the BE-TAHOS device was observed, and we demonstrated that this phenomenon is due to an enhanced leakage current through the ONO tunnel layer compared to the case of single SiO 2 as tunnel oxide. 27 This PDA temperature was chosen because it was demonstrated to be the best condition to achieve large memory windows, good retention and high trap density in the TAHOS cell. Fig.…”

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confidence: 99%

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Multi-Layered Al₂O₃/HfO₂/SiO₂/Si₃N₄/SiO₂Thin Dielectrics for Charge Trap Memory Applications

Congedo¹,

Lamperti²,

Salicio³

et al. 2012

ECS J. Solid State Sci. Technol.

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Charge trap Flash memory device including HfO 2 as charge trapping layer, Al 2 O 3 as the blocking oxide, SiO 2 /Si 3 N 4 /SiO 2 barrier engineered tunnel layer and TaN metal gate (BE-TAHOS stack) is here proposed and investigated. HfO 2 and Al 2 O 3 films are grown by atomic layer deposition and annealed at high temperature (1030 • C) in N 2 . Structural and chemical analyzes proved that BE-TAHOS stack has a good thermal stability after thermal treatment, as required in a standard semiconductor manufacturing process. From electrical analyzes, BE-TAHOS stack exhibited an improvement in the overall program/erase window when compared to a control sample including SiO 2 layer as tunnel oxide (TAHOS stack). The memory window enhancement is due to the presence of the barrier engineered tunnel layer, exploiting the effect of a symmetric barrier composed by dielectrics with different dielectric constants and band offsets. The charge loss of the investigated BE-TAHOS stack is higher than the TAHOS control sample, and it was demonstrated that it is mainly due to the leakage through the barrier engineered tunnel oxide, which requires further optimization for an overall improvement of the memory cell.

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Section: Resultsmentioning

confidence: 92%

mentioning

confidence: 99%

Multi-Layered Al₂O₃/HfO₂/SiO₂/Si₃N₄/SiO₂Thin Dielectrics for Charge Trap Memory Applications

Congedo¹,

Lamperti²,

Salicio³

et al. 2012

ECS J. Solid State Sci. Technol.

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“…Nb 2 O 5 , TiO 2 ), which is another way to increase the deep-level trap density in La 2 O 3 and suppress its reaction with the SiO 2 TL as well [84]; (iii) multi-CTL for band engineering, which is capable of enhancing charge-trapping efficiency [85] and improving device reliability by suppressing the impact of TL degradation [86]. Experimentally, these methods have all been studied, and the results in Figure 14 [61,84,[87][88][89][90] show obvious improvements in the performance of the memory device. HfLaO nanocrystal can provide the largest memory window, but the 50% degradation after 10 years in the retention property is not good for real applications.…”

Section: Nonvolatile Memorymentioning

confidence: 99%

“…CTM with La-based high-k CTL: (a) memory window, (b) P/E transient characteristics, and (c) retention property[61,84,[87][88][89][90].…”

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confidence: 99%

Advances in La-Based High-k Dielectrics for MOS Applications

2019

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This paper reviews the studies on La-based high-k dielectrics for metal-oxide-semiconductor (MOS) applications in recent years. According to the analyses of the physical and chemical characteristics of La2O3, its hygroscopicity and defects (oxygen vacancies, oxygen interstitials, interface states, and grain boundary states) are the main problems for high-performance devices. Reports show that post-deposition treatments (high temperature, laser), nitrogen incorporation and doping by other high-k material are capable of solving these problems. On the other hand, doping La into other high-k oxides can effectively passivate their oxygen vacancies and improve the threshold voltages of relevant MOS devices, thus improving the device performance. Investigations on MOS devices including non-volatile memory, MOS field-effect transistor, thin-film transistor, and novel devices (FinFET and nanowire-based transistor) suggest that La-based high-k dielectrics have high potential to fulfill the high-performance requirements in future MOS applications.

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“…To overcome this film degradation, La 2 O 3 can be doped with other metals to form stable high-k alloys (9).…”

Section: Introductionmentioning

confidence: 99%

Evaluation of HfLaO_x as Blocking Layer for Innovative Nonvolatile Memory Applications

Vitto¹,

Piagge²,

Ravizza³

et al. 2010

ECS Trans.

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In this paper, a study of a La-based high-k oxide to be employed as blocking oxide in future non-volatile scaled memory devices is presented. Hf1-xLaxOy deposited by atomic layer deposition is considered. In order to allow the integration of this material, its chemical interaction with an Al2O3 cap layer has been studied. Moreover, the electrical characteristics have been evaluated after integration in capacitor structures. The rare earth-based ternary oxide presents promising characteristics to be a good candidate as active dielectric for non volatile memory devices.

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Rare earth-based high-k materials for non-volatile memory applications

Cited by 10 publications

References 6 publications

Multi-Layered Al₂O₃/HfO₂/SiO₂/Si₃N₄/SiO₂Thin Dielectrics for Charge Trap Memory Applications

Multi-Layered Al₂O₃/HfO₂/SiO₂/Si₃N₄/SiO₂Thin Dielectrics for Charge Trap Memory Applications

Advances in La-Based High-k Dielectrics for MOS Applications

Evaluation of HfLaO_x as Blocking Layer for Innovative Nonvolatile Memory Applications

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Rare earth-based high-k materials for non-volatile memory applications

Cited by 10 publications

References 6 publications

Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2Thin Dielectrics for Charge Trap Memory Applications

Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2Thin Dielectrics for Charge Trap Memory Applications

Advances in La-Based High-k Dielectrics for MOS Applications

Evaluation of HfLaOx as Blocking Layer for Innovative Nonvolatile Memory Applications

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Multi-Layered Al₂O₃/HfO₂/SiO₂/Si₃N₄/SiO₂Thin Dielectrics for Charge Trap Memory Applications

Multi-Layered Al₂O₃/HfO₂/SiO₂/Si₃N₄/SiO₂Thin Dielectrics for Charge Trap Memory Applications

Evaluation of HfLaO_x as Blocking Layer for Innovative Nonvolatile Memory Applications