Evaluation of HfLaO<sub>x</sub> as Blocking Layer for Innovative Nonvolatile Memory Applications

Vitto, Annalisa Del; Piagge, R.; Ravizza, Enrica; Spadoni, Simona; Sebastiani, Alessandro; Scozzari, C.; Wiemer, C.; Ghidini, G.; Alessandri, Mauro; Fanciulli, M.; Maes, Jan Willem; Verghese, Mohith

doi:10.1149/1.3481630

Cited by 4 publications

(3 citation statements)

References 13 publications

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“…The ternary and quaternary materials described in the tables cover a wide variety of applications, but several are of particular note. A large number of materials have been studied for use as high- k dielectrics, ,− particularly Hf-, ,− Ti-, − and La-containing ,− compounds. Many of these studies have been dedicated to examining compositional effects of various metal atoms in ternary oxides in order to find materials with higher dielectric constants.…”

Section: Overview Of Ternary and Quaternary Ald Processesmentioning

confidence: 99%

“…First, the bulk phase diagram can be used to ascertain which cycle ratio (to tune the composition) and annealing conditions (to tune mixing and phase) need to be employed. In most cases, ALD of a film with the correct stoichiometry does not directly result in a crystalline phase, and a post-deposition anneal is required (this can also be seen in Tables –). ,,,,− ,,,,− ,,,− ,,,,,,,,,,,,,,− Typical annealing conditions are under nitrogen or oxygen atmosphere or in air, and the temperature required to begin crystallization is generally between 600 and 800 °C, with the required temperature often varying depending on the composition of the film. However, while the phase diagram provides thermodynamic information on the bulk system, it has been shown that it often does not rigorously predict the formation of phases in ALD films. , This phenomenon has been hypothesized to be a result of the layer-by-layer growth character of ALD or of bulk material data not applying to the nanometer thickness scale of ALD films, but further investigation is required to unravel the effects.…”

Section: Intermixing and Phase Formationmentioning

confidence: 99%

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Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

et al. 2018

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In the past decade, atomic layer deposition (ALD) has become an important thin film deposition technique for applications in nanoelectronics, catalysis, and other areas due to its high conformality on 3-D nanostructured substrates and control of the film thickness at the atomic level. The current applications of ALD primarily involve binary metal oxides, but for new applications there is increasing interest in more complex materials such as doped, ternary, and quaternary materials. This article reviews how these multicomponent materials can be synthesized by ALD, gives an overview of the materials that have been reported in the literature to date, and discusses important challenges. The most commonly employed approach to synthesize these materials is to combine binary ALD cycles in a supercycle, which provides the ability to control the composition of the material by choosing the cycle ratio. Discussion will focus on four main topics: (i) the characteristics, benefits, and drawbacks of the approaches that currently exist for the synthesis of multicomponent materials, with special attention to the supercycle approach; (ii) the trends in precursor choice, process conditions, and characterization methods, as well as underlying motivations for these design decisions; (iii) the distribution of atoms in the deposited material and the formation of specific (crystalline) phases, which is shown to be dependent on the ALD cycle sequence, deposition temperature, and post-deposition anneal conditions; and (iv) the nucleation effects that occur when switching from one binary ALD process to another, with different explanations provided for why the growth characteristics often deviate from what is expected. This paper provides insight into how the deposition conditions (cycle sequence, temperature, etc.) affect the properties of the resultant thin films, which can serve as a guideline for designing new ALD processes. Furthermore, with an extensive discussion on the nucleation effects taking place during the growth of ternary materials, we hope to contribute to a better understanding of the underlying mechanisms of the ALD growth of multicomponent materials.

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Section: Overview Of Ternary and Quaternary Ald Processesmentioning

confidence: 99%

Section: Intermixing and Phase Formationmentioning

confidence: 99%

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

et al. 2018

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“…Compared with Al 2 O 3 , LaAlO x as BL brought 40% and 32% improvements in program speed and V th saturation window, better robustness to voltage stress, and better retention performance below 120 • C. Besides, HfLaO has also been applied as BL and exhibited improvements in V th saturation window and robustness to voltage stress due to its higher k value (~22) compared to Al 2 O 3 . However, the retention performance degraded after La incorporation, probably due to decreased conduction-band offset [79,80].…”

Section: Nonvolatile Memorymentioning

confidence: 99%

Advances in La-Based High-k Dielectrics for MOS Applications

2019

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This paper reviews the studies on La-based high-k dielectrics for metal-oxide-semiconductor (MOS) applications in recent years. According to the analyses of the physical and chemical characteristics of La2O3, its hygroscopicity and defects (oxygen vacancies, oxygen interstitials, interface states, and grain boundary states) are the main problems for high-performance devices. Reports show that post-deposition treatments (high temperature, laser), nitrogen incorporation and doping by other high-k material are capable of solving these problems. On the other hand, doping La into other high-k oxides can effectively passivate their oxygen vacancies and improve the threshold voltages of relevant MOS devices, thus improving the device performance. Investigations on MOS devices including non-volatile memory, MOS field-effect transistor, thin-film transistor, and novel devices (FinFET and nanowire-based transistor) suggest that La-based high-k dielectrics have high potential to fulfill the high-performance requirements in future MOS applications.

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Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements

Ghazy,

Zanders,

Devi

et al. 2024

Adv Materials Inter

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High‐quality rare earth element (R) based thin films are in demand for applications ranging from (opto)electronics and energy conversion/storage to medical diagnostics, imaging and security technologies. Atomic layer deposition (ALD) offers large‐area homogeneous and conformal ultrathin films and is uniquely suited to address the requirements set by the potential applications of R‐based thin films. The history starts from the 1990s, when the first electroluminescent R‐doped thin films were grown with ALD. The interest soon expanded to rare earth element oxide layers as high‐k gate dielectrics in semiconductor devices, and later to complex ternary and quaternary perovskite oxides with novel functional properties. The most recent advancements related to the combined atomic/molecular layer deposition (ALD/MLD) have rapidly expanded the family of R‐organic hybrid materials with intriguing luminescence and up‐conversion properties. This review provides up‐to‐date insights to the current state of ALD and ALD/MLD research of R‐based thin films and highlights their application potential.

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Evaluation of HfLaO_x as Blocking Layer for Innovative Nonvolatile Memory Applications

Cited by 4 publications

References 13 publications

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Advances in La-Based High-k Dielectrics for MOS Applications

Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements

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Evaluation of HfLaOx as Blocking Layer for Innovative Nonvolatile Memory Applications

Cited by 4 publications

References 13 publications

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Advances in La-Based High-k Dielectrics for MOS Applications

Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements

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Product

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Evaluation of HfLaO_x as Blocking Layer for Innovative Nonvolatile Memory Applications