We report a systematic investigation of the colour contrast (CC) of graphene (one, two and three layers) on 50, 72 and 80 nm thick Al(2)O(3)/Si(100) and 100 and 300 nm thick SiO(2)/Si(100). The CC is determined by the analysis of optical microscopy images taken under white light illumination. A corresponding assignment of graphene in the single-layer, double-layer and trilayer phases is made using micro-Raman spectroscopy. A quantitative evaluation allows us to conclude that the colour contrast between 72 nm alumina and graphene is significantly larger than that between 300 nm silicon oxide and graphene (by factors of 2.2, 2.0 and 3.3 for the single-layer, double-layer and trilayer graphene flakes respectively). Moreover, data indicate that, to increase visibility, the use of a red or a green light is preferable.

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The evolution of the morphology and of the crystallographic ordering of hafnium aluminates deposited by atomic layer deposition has been investigated. Annealing at temperatures as high as 900 °C in N2 or O2 atmosphere is found to promote crystallization of the high-κ layer, together with the growth of an interfacial low-κ oxide. The crystallographic phase has been identified by indexation of transmission electron microscopy selected area diffraction patterns and by Rietveld refinement of grazing incidence x-ray diffractograms. The high κ is found to crystallize in an orthorhombic ternary Hf1−xAlxO2 phase even for an Al content as high as x=0.74. The temperature of crystallization is higher for the Al-richer alloy. The thickness and the electronic density of the interfacial layer are evaluated by combining cross-sectional transmission electron microscopy and x-ray reflectivity analysis.

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