Raman Spectrum of InTe and TlSe Single Crystals

Nizametdinova, M. A.

doi:10.1002/pssb.2220970145

Cited by 28 publications

(20 citation statements)

References 1 publication

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“…The phonon modes at about 125 and 142 cm −1 are assigned to A 1g and E g symmetry, respectively. The phonon assignment matches well with the previously reported Raman studies of InTe by Nizametdinova [28]. The A 1g mode is due to the motion of Te atoms alone, while for E g mode, Te and In 3+ atoms vibrate in opposite directions.…”

Section: Raman Spectral Analysissupporting

confidence: 89%

Ta Doping Effect on Structural and Optical Properties of InTe Thin Films

et al. 2020

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The objective of this work was to study the influence of Ta doping on the structural, transmittance properties, linear absorption parameter, and nonlinear absorption properties of InTe thin films. The as-deposited samples with different Ta doping concentrations were prepared by a magnetron co-sputtering technique and then annealed in nitrogen atmosphere. Structural investigations by X-ray diffraction revealed the tetragonal structure of InTe samples and that the crystallinity decreases with increasing Ta doping concentration. Further structural analysis by Raman spectra also showed good agreement with X-ray diffraction results. The Ta doping concentration and sample thickness determined by energy-dispersive X-ray spectroscopy and scanning electron microscopy increased as Ta dopant increased. In addition, X-ray photoelectron spectroscopic was carried out to analyze the chemical states of the elements. UV–VIS–NIR transmittance spectra were applied to study the transmittance properties and calculate the linear absorption coefficient. Due to Burstein–Moss effect, the absorption edge moved to shorter wavelengths. Meanwhile, the values of band gap were found to increase from 1.71 ± 0.02 eV to 1.85 ± 0.01 eV with the increase of Ta doping concentration. By performing an open aperture Z-scan technique, we found that all Ta-doped InTe samples exhibited two-photon absorption behaviors. The nonlinear optical absorption parameters, such as modulation depth, two-photon absorption coefficient, and two-photon absorption cross-section, decrease with increasing Ta concentration, whereas the damage threshold increases from 176 ± 0.5 GW/cm2 to 242 ± 0.5 GW/cm2. These novel properties show the potential for applications in traditional optoelectronic devices and optical limiters.

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Section: Raman Spectral Analysissupporting

confidence: 89%

Ta Doping Effect on Structural and Optical Properties of InTe Thin Films

et al. 2020

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“…Furthermore, small compositional fluctuations within the shell cannot be excluded. While the low-intensity peak at about 85 cm −1 can be ascribed to the B 1 g symmetry [21], the feature at about 103 cm −1 might indicate the presence of Ge-Te modes due to random diffusion of Ge into the shell [22,23]; their frequency is different in different wires/points, which could explain their broad band. Indeed, also the increased FWHM of the InTe-related peaks (from 8 to 10 cm −1 ) can be consistent with a compositional fluctuation or gradient at the core-shell interface.…”

Section: Resultsmentioning

confidence: 98%

Single-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVD

Cecchini¹,

Selmo²,

Wiemer³

et al. 2017

Materials Research Letters

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We report on the self-assembly of core-shell Ge/In-Te nanowires (NWs) on single crystal Si substrates by Metalorganic Chemical Vapour Deposition (MOCVD), coupled to the Vapour-Liquid-Solid (VLS) mechanism, catalysed by Au nanoparticles (NPs). The NWs are formed by a crystalline Ge core and an InTe (II) shell, have diameters down to 15 nm and show < 110 > oriented growth direction. The role of the MOCVD process parameters and of the NPs size in determining the NWs core-shell microstructure and their alignment was investigated by high-resolution TEM, EDX, XRD and Raman spectroscopy. IMPACT STATEMENT A novel one-step MOCVD growth procedure, yielding self-assembled, oriented and crystalline core-shell Ge/In-Te nanowires with diameters down to 15 nm, along with their chemical-physical characterization.

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“…Samples grown at 225 C showed a broad peak with a wave number of 123 cm −1 , indicating the chemical bonding of In-Te. 22 Figure 2(f) shows variations in resistance as a function of rapid-thermal annealing temperature, using the samples grown at 225 and 250 C. In this case, the films were grown on SiO 2 /Si substrates at both temperatures (the sheet resistance of SiO 2 /Si is about 3.1 × 10 9 /sq.). Samples grown at 225 C showed a low resistance of approximately ∼10 3 /sq, irrespective of increased annealing 24 On the other hand, the as-grown samples at 250 C exhibited a high resistance of approximately 6 × 10 8 /sq, and the resistance decreased slightly with increasing annealing temperature.…”

Section: Resultsmentioning

confidence: 99%

Structural Properties of Phase-Change InSbTe Thin Films Grown at a Low Temperature by Metalorganic Chemical Vapor Deposition

Ahn¹,

Park²,

Hur³

et al. 2011

j nanosci nanotechnol

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The feasibility of new InSbTe (IST) chalcogenide materials at the deposition temperatures of 225 and 250 degrees C using metalorganic chemical vapor deposition (MOCVD) for phase-change random access memory (PRAM) applications was investigated. Samples grown at 225 degrees C consisted of the main InTe phase, including a small amount of Sb. On the other hand, samples grown at 250 degrees C included the crystalline phases of InSb and InSbTe. MOCVD-IST materials are powerful candidates for highly-integrated PRAM applications.

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Raman Spectrum of InTe and TlSe Single Crystals

Cited by 28 publications

References 1 publication

Ta Doping Effect on Structural and Optical Properties of InTe Thin Films

Ta Doping Effect on Structural and Optical Properties of InTe Thin Films

Single-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVD

Structural Properties of Phase-Change InSbTe Thin Films Grown at a Low Temperature by Metalorganic Chemical Vapor Deposition

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