Ta Doping Effect on Structural and Optical Properties of InTe Thin Films

Abstract

The objective of this work was to study the influence of Ta doping on the structural, transmittance properties, linear absorption parameter, and nonlinear absorption properties of InTe thin films. The as-deposited samples with different Ta doping concentrations were prepared by a magnetron co-sputtering technique and then annealed in nitrogen atmosphere. Structural investigations by X-ray diffraction revealed the tetragonal structure of InTe samples and that the crystallinity decreases with increasing Ta doping concentration. Further structural analysis by Raman spectra also showed good agreement with X-ray diffraction results. The Ta doping concentration and sample thickness determined by energy-dispersive X-ray spectroscopy and scanning electron microscopy increased as Ta dopant increased. In addition, X-ray photoelectron spectroscopic was carried out to analyze the chemical states of the elements. UV–VIS–NIR transmittance spectra were applied to study the transmittance properties and calculate the linear absorption coefficient. Due to Burstein–Moss effect, the absorption edge moved to shorter wavelengths. Meanwhile, the values of band gap were found to increase from 1.71 ± 0.02 eV to 1.85 ± 0.01 eV with the increase of Ta doping concentration. By performing an open aperture Z-scan technique, we found that all Ta-doped InTe samples exhibited two-photon absorption behaviors. The nonlinear optical absorption parameters, such as modulation depth, two-photon absorption coefficient, and two-photon absorption cross-section, decrease with increasing Ta concentration, whereas the damage threshold increases from 176 ± 0.5 GW/cm2 to 242 ± 0.5 GW/cm2. These novel properties show the potential for applications in traditional optoelectronic devices and optical limiters.

Layer-Dependent Nonlinear Optical Properties of WS2, MoS2, and Bi2S3 Films Synthesized by Chemical Vapor Deposition

“…The σ TPA of 4 L-Bi 2 S 3 is 1.32 × 10 3 GM. These values are 1–2 orders of magnitude higher than InTe (89.42 ± 0.05 GM) . Meanwhile, the value is comparable to CdSe quantum dots (∼10 3 GM) but lower than that of MAPbBr 3 microcrystals (∼10 4 GM) due to the larger molecular density of chalcogenide compounds.…”

Production and Characterization of Electrodeposited Cadmium Sulfide Semiconductor Films with Different Boron Content

“…investigated the transmittance of the Ta‐doped InTe thin films and they reported that the transmittance is nearly 84% in the transparence region and the value of transmittance increases after Ta doping. [ 32 ]…”

“…C. Liu et al investigated the transmittance of the Ta-doped InTe thin films and they reported that the transmittance is nearly 84% in the transparence region and the value of transmittance increases after Ta doping. [32] The optical bandgap of the pure CdS semiconductor thin films was calculated as 2.14 eV. Optical bandgap values of 0.06 and 0.1 m boron-doped CdS semiconductor thin films were found to be 2.51, and 2.43 eV respectively.…”

The Effect of pH Solution in the Sol–Gel Process on the Structure and Properties of Thin SnO2 Films

“…The splitting of the conduction band promotes a decrease in optical adsorption due to transitions between its levels. A strong dispersion of the s-level of the conduction band, which is characteristic of most transparent conducting oxides, leads to a shift of the optical absorption edge towards higher energies with an increase in the concentration of charge carriers [34][35][36][37]. The filling of the dispersive conduction band leads to an increase in the energy required for the transition of an electron from the valence band to the conduction band (Figure 13).…”