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Phase-change InSbTe (IST) single crystalline nanowires were successfully synthesized at a low temperature of 250 degrees C by metalorganic chemical vapor deposition (MOCVD). The growth of IST nanowires by MOCVD, at very high working pressure, was governed by supersaturation. The growth mechanism of the IST nanowires by MOCVD is addressed in this paper. Under high working pressure, the InTe phase was preferentially formed on the TiAlN electrode, and the InTe protrusions were nucleated on the InTe films under high supersaturation. The Sb was continuously incorporated into the InTe protrusions, which was grown as an IST nanowire. Phase-change-induced memory switching was realized in IST nanowires with a threshold voltage of about 1.6 V. The ability to grow IST nanowires at low temperature by MOCVD should open opportunities for investigation of the nanoscale phase-transition phenomena.

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