Single-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVD

Cecchini, Raimondo; Selmo, S.; Wiemer, C.; Rotunno, Enzo; Lazzarini, L.; Luca, Marta De; Zardo, Ilaria; Longo, M.

doi:10.1080/21663831.2017.1384409

Cited by 5 publications

(3 citation statements)

References 31 publications

(33 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…No indications of phase separation have been reported in previous investigations of phase change properties of thin films of In-Ge-Te alloys [38], even if limited switching cycling has been evidenced on PCM cells based on one of such alloys [33]. On the other hand, a similar type of phase separation to the one presently observed between Ge and In-Te has been reported in MOCVD grown nanowires [61].…”

Section: Deposition Of In-ge-te Nanostructuresmentioning

confidence: 50%

Fabrication of ordered Sb–Te and In–Ge–Te nanostructures by selective MOCVD

Cecchini

Martella

Lamperti

et al. 2020

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

The controlled growth of chalcogenide nanoscaled phase change material structures can be important to facilitate integration and to enable complex architectures for phase change memory and other microelectronic applications. Here, the growth of Sb-Te and In-Ge-Te alloys by metal-organic chemical vapour deposition (MOCVD) on patterned substrates featured with an array of recesses (~130 nm features width) was investigated. High selectivity, with preferential growth on a CoSi 2 metallic layer at the recess bottom with respect to the surrounding SiO 2 masking layer, was obtained, leading to a single-step fabrication of arrays of high-aspect-ratio chalcogenide nanostructures. The growth selectivity, as well as the morphology, composition and microstructure of the grown nanostructures, as a function of the different MOCVD process parameters, were investigated by scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, Raman spectroscopy and Fourier transformed infrared spectroscopy. Thanks to the chosen substrates, the synthesized nanostructures were also directly electrically accessible, as proved by conductiveatomic force microscopy.

show abstract

Section: Deposition Of In-ge-te Nanostructuresmentioning

confidence: 50%

Fabrication of ordered Sb–Te and In–Ge–Te nanostructures by selective MOCVD

Cecchini

Martella

Lamperti

et al. 2020

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The crystallization temperature is increased up to 290 • C, in the case of In 3 Sb 1 Te 2 [14], and 276 • C, in the case of doped In-Ge-Te, for which 10-years retention at temperatures higher than 150 • C has been found [15]. Reports on In-based alloys, both in the form of planar PCM devices [16] and as single and core-shell nanowires [17,18], have been published. Therefore, it is important to investigate the possibility of using appropriate material alloys and combinations to improve on material management issues.…”

Section: Introductionmentioning

confidence: 99%

Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy

et al. 2022

Self Cite

View full text Add to dashboard Cite

In this study, we deposit a Ge-rich Ge–Sb–Te alloy by physical vapor deposition (PVD) in the amorphous phase on silicon substrates. We study in-situ, by X-ray and ultraviolet photoemission spectroscopies (XPS and UPS), the electronic properties and carefully ascertain the alloy composition to be GST 29 20 28. Subsequently, Raman spectroscopy is employed to corroborate the results from the photoemission study. X-ray diffraction is used upon annealing to study the crystallization of such an alloy and identify the effects of phase separation and segregation of crystalline Ge with the formation of grains along the [111] direction, as expected for such Ge-rich Ge–Sb–Te alloys. In addition, we report on the electrical characterization of single memory cells containing the Ge-rich Ge–Sb–Te alloy, including I-V characteristic curves, programming curves, and SET and RESET operation performance, as well as upon annealing temperature. A fair alignment of the electrical parameters with the current state-of-the-art of conventional (GeTe)n-(Sb2Te3)m alloys, deposited by PVD, is found, but with enhanced thermal stability, which allows for data retention up to 230 °C.

show abstract

“…Among the different methods explored to overcome the above limitations, nanowire (NWs) based PCMs fabricated by the bottom-up approach have drawn considerable interest [ 10 , 11 , 12 , 13 , 14 , 15 ]. Advantages of using NWs for such an application are their small sub lithographic feature sizes and single-crystalline defect-free structure, where novel functionalities are expected to originate by engineering the constituent compositions, sizes, and structures, as in the case of axial [ 16 , 17 , 18 ], radial (core-shell) [ 19 , 20 ], and branched heterostructured NWs [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires

et al. 2022

Self Cite

View full text Add to dashboard Cite

Controlling material thickness and element interdiffusion at the interface is crucial for many applications of core-shell nanowires. Herein, we report the thickness-controlled and conformal growth of a Sb2Te3 shell over GeTe and Ge-rich Ge-Sb-Te core nanowires synthesized via metal-organic chemical vapor deposition (MOCVD), catalyzed by the Vapor–Liquid–Solid (VLS) mechanism. The thickness of the Sb2Te3 shell could be adjusted by controlling the growth time without altering the nanowire morphology. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques were employed to examine the surface morphology and the structure of the nanowires. The study aims to investigate the interdiffusion, intactness, as well as the oxidation state of the core-shell nanowires. Angle-resolved X-ray photoelectron spectroscopy (XPS) was applied to investigate the surface chemistry of the nanowires. No elemental interdiffusion between the GeTe, Ge-rich Ge-Sb-Te cores, and Sb2Te3 shell of the nanowires was revealed. Chemical bonding between the core and the shell was observed.

show abstract

Single-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVD

Cited by 5 publications

References 31 publications

Fabrication of ordered Sb–Te and In–Ge–Te nanostructures by selective MOCVD

Fabrication of ordered Sb–Te and In–Ge–Te nanostructures by selective MOCVD

Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy

Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires

Contact Info

Product

Resources

About