Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy

Fattorini, Adriano Díaz; Chèze, Caroline; Garcia, Inaki Lopez; Petrucci, Christian; Bertelli, M.; Riva, Flavia Righi; Prili, Simone; Privitera, S.; Buscema, Marzia; Sciuto, Antonella; Franco, Salvatore Di; D’Arrigo, Giuseppe; Longo, M.; Simone, Sara De; Mussi, Valentina; Placidi, E.; Cyrille, Marie-Claire; Calarco, Raffaella; Arciprete, F.

doi:10.3390/nano12081340

Cited by 6 publications

(6 citation statements)

References 38 publications

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“…[ 30 ] The cycle numbers of TiTe 2 ‐PCH, NiTe 2 ‐PCH, and MoTe 2 ‐PCH were ≈2×10 6 , ≈4×10 5 , and ≈1×10 7 , respectively. Compared with devices using conventional bulk PCM layers, [ 31,32 ] the TiTe 2 ‐PCH and MoTe 2 ‐PCH devices exhibited significantly improved cycling endurance. Interestingly, RESET failures were observed for (Ti, Mo)Te 2 ‐PCH (Figures 1d,f), attributable to the mechanical stress at the interface between the PCM and bottom electrode contact (heater), [ 33 ] whereas NiTe 2 ‐PCH exhibited SET failures (Figure 1e), likely originating from incongruent melting and elemental segregation.…”

Section: Resultsmentioning

confidence: 99%

Effect of Transition Metal Dichalcogenide Based Confinement Layers on the Performance of Phase‐Change Heterostructure Memory

Kim

Park

Lee

et al. 2023

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Phase‐change random‐access memory is a promising non‐volatile memory technology. However repeated phase‐change operations can cause durability issues owing to defects formed by long‐distance atom diffusion. To mitigate these issues, phase‐change heterostructure (PCH) devices with confinement material (CM) layers based on transition metal dichalcogenides (TMDs) such as TiTe2 have been proposed. This study implements PCH devices with additional TMDs, including NiTe2 and MoTe2, alongside TiTe2, and analyzes their characteristics by examining the differences in the CM layers. The results show that the NiTe2‐based PCH device demonstrates a RESET current of 1.4 mA, 38% lower than that of the TiTe2‐based device, enabling low‐power operation. Furthermore, the MoTe2‐based PCH device exhibits a cycling endurance exceeding 107 cycles, a five‐fold improvement in durability compare with the TiTe2‐based device. The performance differences observe in each PCH device can be attributed to the variation in the material properties, such as the cohesive energy and electrical conductivity, of the TMDs used as the CM layer. These results provide critical clues to improve the performance and reliability of conventional PCH memory devices.

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Section: Resultsmentioning

confidence: 99%

Effect of Transition Metal Dichalcogenide Based Confinement Layers on the Performance of Phase‐Change Heterostructure Memory

Kim

Park

Lee

et al. 2023

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“…Zuliani et al explored the region rich in Ge element in the GST ternary diagram, which made the thermal stability of Ge-rich GST meet the specifications of automobile application, but the programming speed loss was about one-third of GST [ 6 ]. Diaz et al improved the bottom electrode contact and thermal stability (1h retention is 230 °C) by adding a GST buffer layer under Ge-rich GST [ 7 ]. The high thermal stability of a Ge-rich GST alloy is due to the formation of local tetrahedral Ge-Ge bonds, which leads to a more disordered structure; that is, it is less prone to crystallization, which increases the resistivity of crystalline GST and reduces the RESET power consumption of PCRAM [ 6 ].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb2Te3

Zhang

Rong

et al. 2023

Nanomaterials

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As a new generation of non-volatile memory, phase change random access memory (PCRAM) has the potential to fill the hierarchical gap between DRAM and NAND FLASH in computer storage. Sb2Te3, one of the candidate materials for high-speed PCRAM, has high crystallization speed and poor thermal stability. In this work, we investigated the effect of carbon doping on Sb2Te3. It was found that the FCC phase of C-doped Sb2Te3 appeared at 200 °C and began to transform into the HEX phase at 25 °C, which is different from the previous reports where no FCC phase was observed in C-Sb2Te3. Based on the experimental observation and first-principles density functional theory calculation, it is found that the formation energy of FCC-Sb2Te3 structure decreases gradually with the increase in C doping concentration. Moreover, doped C atoms tend to form C molecular clusters in sp2 hybridization at the grain boundary of Sb2Te3, which is similar to the layered structure of graphite. And after doping C atoms, the thermal stability of Sb2Te3 is improved. We have fabricated the PCRAM device cell array of a C-Sb2Te3 alloy, which has an operating speed of 5 ns, a high thermal stability (10-year data retention temperature 138.1 °C), a low device power consumption (0.57 pJ), a continuously adjustable resistance value, and a very low resistance drift coefficient.

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“…In previous works, we have studied the synthesis and the crystallization of single Ge-Sb-Te films with variable Ge content [16], as well as heterostructures formed by planar layers of the Ge-Sb-Te system [17]. Moreover, the self-assembly and structural characterization of core-shell nanowires of the Ge-Sb-Te system was investigated [18].…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide

Bertelli

Fattorini²,

Simone³

et al. 2022

Nanomaterials

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The morphological, structural, and electrical properties of as-grown and annealed Ge2Sb2Te5 (GST) layers, deposited by RF-sputtering on flexible polyimide, were studied by means of optical microscopy, atomic force microscopy, X-ray diffraction, Raman spectroscopy, and electrical characterization. The X-ray diffraction annealing experiments showed the structural transformation of GST layers from the as-grown amorphous state into their crystalline cubic and trigonal phases. The onset of crystallization of the GST films was inferred at about 140 °C. The vibrational properties of the crystalline GST layers were investigated via Raman spectroscopy with mode assignment in agreement with previous works on GST films grown on rigid substrates. The electrical characterization revealed a good homogeneity of the amorphous and crystalline trigonal GST with an electrical resistance contrast of 8 × 106.

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Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy

Cited by 6 publications

References 38 publications

Effect of Transition Metal Dichalcogenide Based Confinement Layers on the Performance of Phase‐Change Heterostructure Memory

Effect of Transition Metal Dichalcogenide Based Confinement Layers on the Performance of Phase‐Change Heterostructure Memory

The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb2Te3

Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide

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