Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide

Abstract

The morphological, structural, and electrical properties of as-grown and annealed Ge2Sb2Te5 (GST) layers, deposited by RF-sputtering on flexible polyimide, were studied by means of optical microscopy, atomic force microscopy, X-ray diffraction, Raman spectroscopy, and electrical characterization. The X-ray diffraction annealing experiments showed the structural transformation of GST layers from the as-grown amorphous state into their crystalline cubic and trigonal phases. The onset of crystallization of the GST films was inferred at about 140 °C. The vibrational properties of the crystalline GST layers were investigated via Raman spectroscopy with mode assignment in agreement with previous works on GST films grown on rigid substrates. The electrical characterization revealed a good homogeneity of the amorphous and crystalline trigonal GST with an electrical resistance contrast of 8 × 106.

Preparation of MXene-based hybrids and their application in neuromorphic devices

“…Chalcogenides, especially Ge 2 Sb 2 Te 5 (GST), have been extensively studied for the applications of phase-change RAMs (PCRAMs) due to their reversible switching behavior between crystalline and amorphous states when stimulated with electrical current or laser pulse [135][136][137][138]. However, GST PCRAMs encounter shortcomings such as high programming current accompanied by high power consumption, and the phase transition rate is still not sufficiently high for practical applications [139,140].…”