Raman Spectroscopy of Boron-Doped Single-Layer Graphene

Abstract

The introduction of foreign atoms, such as nitrogen, into the hexagonal network of an sp(2)-hybridized carbon atom monolayer has been demonstrated and constitutes an effective tool for tailoring the intrinsic properties of graphene. Here, we report that boron atoms can be efficiently substituted for carbon in graphene. Single-layer graphene substitutionally doped with boron was prepared by the mechanical exfoliation of boron-doped graphite. X-ray photoelectron spectroscopy demonstrated that the amount of substitutional boron in graphite was ~0.22 atom %. Raman spectroscopy demonstrated that the boron atoms were spaced 4.76 nm apart in single-layer graphene. The 7-fold higher intensity of the D-band when compared to the G-band was explained by the elastically scattered photoexcited electrons by boron atoms before emitting a phonon. The frequency of the G-band in single-layer substitutionally boron-doped graphene was unchanged, which could be explained by the p-type boron doping (stiffening) counteracting the tensile strain effect of the larger carbon-boron bond length (softening). Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.

Ultrasensitive gas detection of large-area boron-doped graphene

“…For BG, two prominent peaks located at approximately 186.4 and 190.3 eV are identified in the B1s line scans (Fig. 1E), which could be assigned to the substitutional boron atoms embedded within the graphene lattice and edge oxidized boron, respectively (36,37).…”

Transformation of metallic boron into substitutional dopants in graphene on6H−SiC(0001)

“…In this Rapid Communication, we present a detailed spectroscopic study of the growth of B-doped graphene on 6H -SiC(0001) obtained by depositing B on SiC prior to graphene formation. In contrast to other methods already proposed [11][12][13][14][15], in which either exfoliated graphene or chemical vapor deposition is employed, this preparation ensures a simple routine free of any precursors to achieve high-quality B-doped graphene. We find that the B atoms are incorporated in an identical chemical environment into the graphene layer as well as into the buffer layer, exhibiting the same local structure in both lattices.…”

p‐Element‐Doped Graphene: Heteroatoms for Electrochemical Enhancement

“…The more popular methods include thermal annealing of graphite/graphite oxides, [4][5][6][7] chemical vapor deposition (CVD), [8,9] and arc discharge. The available boron precursors range from boric acid, [6,8] boranes, [7,9] boron trifluoride, [4] and B 2 O 3 . [5] However, some of these precursors are less popular because of their toxicity, or because of their environmentally unfriendly or dangerous nature, such as B 2 H 6 and BBr 3 .…”