Ultrasensitive gas detection of large-area boron-doped graphene

Lv, Ruitao; Chen, Gugang; Li, Qing; McCreary, Amber; Botello-Méndez, Andrés R.; Морозов, С. В.; Liang, Liangbo; Declerck, Xavier; Perea-López, Néstor; Cullen, David A.; Feng, Simin; Elías, Ana Laura; Cruz-Silva, Rodolfo; Fujisawa, Kazunori; Endo, Morinobu; Kang, Feiyu; Charlier, Jean Christophe; Meunier, Vincent; Pan, Minghu; Harutyunyan, Avetik R.; Novoselov, Konstantin; Terrones, Mauricio

doi:10.1073/pnas.1505993112

Cited by 183 publications

(116 citation statements)

References 60 publications

(64 reference statements)

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“…The adsorption of trace amounts of gas molecules on Gr surface causes significant charge transfer between Gr and gas molecules, resulting in a noticeable conductance change of Gr 5, 11. Since the pioneering work reported the capability of Gr to detect a single NO 2 molecule,12 Gr materials fabricated via various strategies, such as mechanical exfoliation,12, 13, 14 chemical vapor deposition,1, 9, 15, 16 epitaxial growth,17 and chemically18, 19, 20, 21 or thermally22 reduced graphene oxide (RGO) have been exploited for gas sensing. Among them, RGO has attracted widespread attention for this purpose due to the low cost and high yield in production, and the convenience of modifying it with functional groups or doping atoms to tailor its gas sensing properties 19, 23.…”

Section: Introductionmentioning

confidence: 99%

A 3D Chemically Modified Graphene Hydrogel for Fast, Highly Sensitive, and Selective Gas Sensor

et al. 2016

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Reduced graphene oxide (RGO) has proved to be a promising candidate in high‐performance gas sensing in ambient conditions. However, trace detection of different kinds of gases with simultaneously high sensitivity and selectivity is challenging. Here, a chemiresistor‐type sensor based on 3D sulfonated RGO hydrogel (S‐RGOH) is reported, which can detect a variety of important gases with high sensitivity, boosted selectivity, fast response, and good reversibility. The NaHSO3 functionalized RGOH displays remarkable 118.6 and 58.9 times higher responses to NO2 and NH3, respectively, compared with its unmodified RGOH counterpart. In addition, the S‐RGOH sensor is highly responsive to volatile organic compounds. More importantly, the characteristic patterns on the linearly fitted response–temperature curves are employed to distinguish various gases for the first time. The temperature of the sensor is elevated rapidly by an imbedded microheater with little power consumption. The 3D S‐RGOH is characterized and the sensing mechanisms are proposed. This work gains new insights into boosting the sensitivity of detecting various gases by combining chemical modification and 3D structural engineering of RGO, and improving the selectivity of gas sensing by employing temperature dependent response characteristics of RGO for different gases.

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Section: Introductionmentioning

confidence: 99%

A 3D Chemically Modified Graphene Hydrogel for Fast, Highly Sensitive, and Selective Gas Sensor

et al. 2016

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“…19 Such functionalization of graphene, whether substitutional or surface molecular, provides both sensitivity and selectivity enhancement, and a number of such treatments now exist for graphene gas sensors. [20][21][22][23] In this work, we have integrated monolayer graphene sensor with a back-end CMOS detection system to realize a RF-capable gas sensor with low power and low temperature requirements that incorporates the superior response time and sensitivity of monolayer graphene into a monolithic CMOS package. To the best of our knowledge, our work represents the first complete monolithic integration of a monolayer graphene gas sensor and CMOS.…”

Section: Introductionmentioning

confidence: 99%

3D integrated monolayer graphene–Si CMOS RF gas sensor platform

et al. 2017

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Integration of a complementary metal-oxide semiconductor (CMOS) and monolayer graphene is a significant step toward realizing low-cost, low-power, heterogeneous nanoelectronic devices based on two-dimensional materials such as gas sensors capable of enabling future mobile sensor networks for the Internet of Things (IoT). But CMOS and post-CMOS process parameters such as temperature and material limits, and the low-power requirements of untethered sensors in general, pose considerable barriers to heterogeneous integration. We demonstrate the first monolithically integrated CMOS-monolayer graphene gas sensor, with a minimal number of post-CMOS processing steps, to realize a gas sensor platform that combines the superior gas sensitivity of monolayer graphene with the low power consumption and cost advantages of a silicon CMOS platform. Mature 0.18 µm CMOS technology provides the driving circuit for directly integrated graphene chemiresistive junctions in a radio frequency (RF) circuit platform. This work provides important advances in scalable and feasible RF gas sensors specifically, and toward monolithic heterogeneous graphene-CMOS integration generally. 1-3 In these cases, power and size requirements are not critical, and such sensors tend to be large and bulky. But with the rapid expansion and prevalence of newer technologies like smart phones, cloud computing and the Internet of Things (IoT), mobile sensors are recognized as an essential component in future ubiquitous sensor networks. 4,5 The goals of IoT sensor networks require mobile and untethered sensors in quantities that negate any realistic possibility of individual sensor maintenance or battery replacement. The expectation is that the sheer number of future sensor devices, the "things" of IoT, will preclude human maintenance of individual nodes within large sensor networks. The implications for future device production are then twofold: the sensors must operate at low-power, and the cost of each device should be low enough that the expected orders of magnitude increase in sensor nodes is feasible. Much of current gas sensor research is therefore directed at the need for low-cost, low-power portable gas sensors, as well as integration with the technology platform best suited to meet that need: silicon complementary metal-oxide semiconductor (CMOS).Solid-state gas sensors cover a wide range of technologies, from microelectromechanical thermal and mass sensors to optical and chemiresistive sensors. 6,7 Of these, one of the most common is the chemisresistive sensor, whose relatively simple design and operation make it a strong candidate for CMOS integration.

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“…If, on one hand, the presence of defects can degrade transport properties in graphene, reducing the mobility of electrons or holes, on the other hand, the defects can increase the sensitivity of sensor devices based on pristine graphene [5][6][7]. In fact, the sensor sensitivity may be limited by the chemical inertness of graphene.…”

Section: Introductionmentioning

confidence: 99%

“…The incorporation of boron atoms in graphene was obtained by different methods: exfoliation of boron-doped graphite [14], arc discharge of graphite electrodes in the presence of diborane [15], thermal decomposition of boron carbide powder [16], thermal annealing of graphene oxide in presence of boron oxide [9], hot filament CVD [17], and chemical vapor deposition (CVD) using solid or gas precursors [7,[18][19][20][21][22][23]. The CVD technique could produce a single layer of boron-doped graphene with an extremely toxic and inflammable gas, that is, diborane, as the precursor [21,22].…”

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confidence: 99%

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Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

Romani

Larrudé

Costa

et al. 2017

Journal of Nanomaterials

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We synthesized single-layer graphene from a liquid precursor (triisopropyl borate) using a chemical vapor deposition. Optical microscopy, scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy measurements were used for the characterization of the samples. We investigated the effects of the processing temperature and time, as well as the vapor pressure of the precursor. The B 1s core-level XPS spectra revealed the presence of boron atoms incorporated into substitutional sites. This result, corroborated by the observed upshift of both G and 2D bands in the Raman spectra, suggests the p-doping of single-layer graphene for the samples prepared at 1000 ∘ C and pressures in the range of 75 to 25 mTorr of the precursor vapor. Our results show that, in optimum conditions for single-layer graphene growth, that is, 1000 ∘ C and 75 mTorr for 5 minutes, we obtained samples presenting the coexistence of pristine graphene with regions of boron-doped graphene.

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Ultrasensitive gas detection of large-area boron-doped graphene

Cited by 183 publications

References 60 publications

A 3D Chemically Modified Graphene Hydrogel for Fast, Highly Sensitive, and Selective Gas Sensor

A 3D Chemically Modified Graphene Hydrogel for Fast, Highly Sensitive, and Selective Gas Sensor

3D integrated monolayer graphene–Si CMOS RF gas sensor platform

Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

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