Raman Spectra of α‐ and γ‐In₂Se₃

Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers

“…The Raman spectra displayed in Figure 3 indicate that the as-deposited IGS layers (A) contain (In 1-z Ga z ) 2 Se 3 . Whilst the peak at 151cm -1 is at the position expected for z = 0, the single shoulder on the low-wavenumber side has been observed for Ga-containing material whereas Ga-free material is reported to exhibit symmetrical shoulders on both sides [12,15]. The peak at 259cm -1 in the spectrum from the Cu-treated sample (B) indicates the presence of copper selenides in the precursor layer following immersion in the Cu solution [16].…”

Preparation and characterization of electrodeposited indium selenide thin films

“…It shows that the film consist of a mixture of In 2 Se 3 and InSe phases. In 2 Se 3 is clearly identified by the Raman peaks at 85,155 cm -1 , whereas InSe is characterized by Raman peaks at172, 195 and 222cm -1 [13,14]. From the figures, it is observed that the LO polar phonon mode of indium selenide is observed at 211cm -1 [15].…”

Structural control of In 2 Se 3 polycrystalline thin films by molecular beam epitaxy

“…While, the dark conductivity increased with increasing the VI/III ratios more than 20. It was reported that the conductivity of γ-In 2 Se 3 was very low like an insulator (10 -7 -10 -10 S/cm) [4,19]. On the other hand, several papers reported that α-In 2 Se 3 had a very high conductivity [4,20,21].…”

“…Furthermore, the superstructure was formed by spontaneous ordering of native Ga vacancies in the defect zincblende structure [1][2][3]. On the other hand, In 2 Se 3 has two crystal structures, i.e., a layered structure (α-phase) and a defect wurtzite structure (γ-phase) [4][5][6]. The layered structure of the α-In 2 Se 3 consists of rather loose stack of covalently bonded layers, including five atomic layers of Se-In-Se-In-Se [7].…”