Structural control of In ₂ Se ₃ polycrystalline thin films by molecular beam epitaxy

Abstract

Structural control of In 2 Se 3 polycrystalline thin films was attempted by molecular beam epitaxy (MBE) technique. In 2 Se 3 polycrystalline films were obtained on glass substrates at substrate temperatures above 400°C. VI/III ratio greatly affected crystal structure of In 2 Se 3 polycrystalline films. Mixtures of α-In 2 Se 3 and γ-In 2 Se 3 were obtained at VI/III ratios greater than 20, and layered InSe polycrystalline films were formed at VI/III ratios below 1. γ-In 2 Se 3 polycrystalline thin films without α-phase were successfully deposited with VI/III ratios in a range of 2 to 4. Photocurrent spectra of the γ-In 2 Se 3 polycrystalline films showed an abrupt increase at approximately 1.9 eV, which almost corresponds with the reported bandgap of γ-In 2 Se 3 . Dark conductivity and photoconductivity measured under solar simulator light (AM 1.5, 100 mW/cm 2 ) were approximately 10 -9 and 10 -5 S/cm in the γ-In 2 Se 3 polycrystalline thin films, respectively.

Properties of Co‐Evaporated RbInSe2Thin Films

“…The experimentally derived bandgap energy of the In 2 Se 3 thin film fits well with the literature . The theoretical prediction of the γ‐In 2 Se 3 bandgap, however, is about 0.5 eV larger than the measured bandgap.…”

Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction

“…To date, only isolated micrometer-sized α-In 2 Se 3 crystals had been grown using chemical vapor deposition (CVD) , and physical vapor deposition (PVD) ,, approaches. The MBE growth of In 2 Se 3 has mostly been reported for thick film − using indium elemental sources, which is incompatible with the growth of ultrathin films due to its low melting point.…”

Thermal replacement reaction: a novel route for synthesizing eco-friendly ZnO@γ-In2Se3hetero-nanostructures by replacing cadmium with indium and their photoelectrochemical and photocatalytic performances

“…15 These advantages make nano-structural In x Se y play an important role for applications in electrochemical 16 and photovoltaic devices. 17 Various strategies have been utilized to synthesize crystalline In x Se y such as chemical vapor deposition, 18 thermal evaporation, 19 molecular beam epitaxy, 20 and electrochemical atomic layer epitaxy. 21 However, there are no reports on In x Se y prepared via the chemical replacement reaction from CdSe.…”